Abstract: Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

Abstract: A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.

Abstract: A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.

Abstract: A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.

Abstract: Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

Abstract: Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

Abstract: Embodiments herein describe structures of low-force wafer test probes and formation thereof. Structures of low-force wafer test probes and their formation via gray scale etch or electroplating is described. Structures are described that include a lower base structure on top of a substrate and an upper blade structure on top of the lower base structure. In various embodiments, a crown of a C4 bump is accommodated by one or both of: i) a cavity present in the lower base structure; and ii) a height of the upper blade structure. Processes for fabricating probe structures are described that include forming lower base structures upon a substrate and forming upper blade structures on top of the lower base structures. The upper blade structures include at least one blade. Each of the blade(s) include a cutting edge that points toward a center point within the probe structure.

Abstract: A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.

Abstract: A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.

Abstract: A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.