Abstract: A semiconductor device for emitting electromagnetic radiation, and to a method of producing the same, which can be used as a semiconductor-based, structured light source. The semiconductor device comprises a layer stack structure composed of an n-doped layer, an active layer and a p-doped layer, as well as a connection structure comprising conductor layers and at least one insulator layer, the conductor layers being arranged, parallel to and spaced apart from one another, along a first direction that is parallel to the active layer of the layer stack structure, and at least one insulator layer being arranged between at least two conductor layers, one or more conductor layers being electrically connected to the p-doped layer of the layer stack structure.

Abstract: A semiconductor device for emitting electromagnetic radiation, and to a method of producing the same, which can be used as a semiconductor-based, structured light source. The semiconductor device comprises a layer stack structure composed of an n-doped layer, an active layer and a p-doped layer, as well as a connection structure comprising conductor layers and at least one insulator layer, the conductor layers being arranged, parallel to and spaced apart from one another, along a first direction that is parallel to the active layer of the layer stack structure, and at least one insulator layer being arranged between at least two conductor layers, one or more conductor layers being electrically connected to the p-doped layer of the layer stack structure.

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.