Patents by Inventor Sönke Tautz
Sönke Tautz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150049776Abstract: An optoelectronic semiconductor laser includes a growth substrate; a semiconductor layer sequence that generates laser radiation; a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence; a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer; and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 ?m to 100 ?m.Type: ApplicationFiled: September 30, 2014Publication date: February 19, 2015Inventors: Christoph Eichler, Sönke Tautz
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Publication number: 20140362883Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.Type: ApplicationFiled: April 29, 2014Publication date: December 11, 2014Inventors: Alfred Lell, Uwe Strauss, Soenke Tautz, Clemens Vierheilig
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Publication number: 20140341247Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 ?m.Type: ApplicationFiled: March 11, 2013Publication date: November 20, 2014Inventors: Uwe Strauß, Sönke Tautz, Alfred Lell, Clemens Vierheilig
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Patent number: 8867582Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 ?m is arranged between the laser diode chip and the mounting part.Type: GrantFiled: April 4, 2013Date of Patent: October 21, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Uwe Strauss, Soenke Tautz, Alfred Lell, Karsten Auen, Clemens Vierheilig
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Patent number: 8858030Abstract: A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface, and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.Type: GrantFiled: April 6, 2011Date of Patent: October 14, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Avramescu, Alfred Lell, Soenke Tautz, Andreas Breidenassel
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Publication number: 20140217425Abstract: A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface.Type: ApplicationFiled: July 30, 2012Publication date: August 7, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GmbHInventors: Fabian Kopp, Alfred Lell, Christoph Eichler, Clemens Vierheilig, Sönke Tautz
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Patent number: 8737445Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.Type: GrantFiled: April 4, 2013Date of Patent: May 27, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Soenke Tautz, Uwe Strauss, Clemens Vierheilig
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Patent number: 8564185Abstract: A semiconductor light source is provided, the semiconductor light source having a primary radiation source (1) which, when the semiconductor light source is operated, emits electromagnetic primary radiation (5) in a first wavelength range, and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is fed. The luminescence conversion module (2) contains a luminescence conversion element (6) which, by means of a luminescent material, absorbs primary radiation (5) from the first wavelength range and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is arranged on a heat sink (3) at a distance from the primary radiation source (1).Type: GrantFiled: September 11, 2008Date of Patent: October 22, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Hubert Ott, Alfred Lell, Sönke Tautz, Uwe Strauss, Frank Baumann, Kirstin Petersen
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Publication number: 20130272333Abstract: A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 ?m.Type: ApplicationFiled: April 9, 2013Publication date: October 17, 2013Inventors: Uwe Strauss, Soenke Tautz, Alfred Lell, Clemens Vierheilig
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Publication number: 20130148683Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: December 17, 2008Publication date: June 13, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20130107534Abstract: A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.Type: ApplicationFiled: April 6, 2011Publication date: May 2, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Adrian Avramescu, Alfred Lell, Soenke Tautz, Andreas Breidenassel
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Patent number: 8369370Abstract: A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.Type: GrantFiled: December 17, 2008Date of Patent: February 5, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20120326178Abstract: An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.Type: ApplicationFiled: November 30, 2010Publication date: December 27, 2012Applicant: OSRAM Opto Semiconductors GmbHInventors: Michael Fehrer, Alfred Lell, Martin Müller, Tilman Schlenker, Sönke Tautz, Uwe Strauss
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Patent number: 8306084Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (Type: GrantFiled: December 16, 2008Date of Patent: November 6, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Wolfgang Reill, Soenke Tautz, Peter Brick, Uwe Strauss
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Publication number: 20120039072Abstract: In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 ?m.Type: ApplicationFiled: October 19, 2009Publication date: February 16, 2012Inventors: Alfred Lell, Sönke Tautz, Uwe Strauss, Martin Rudolf Behringer, Stefanie Brüninghoff, Dimitri Dini, Dominik Eisert, Christoph Eichler
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Publication number: 20110188530Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: December 17, 2008Publication date: August 4, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20110051766Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (Type: ApplicationFiled: December 16, 2008Publication date: March 3, 2011Applicant: OSRRAM Opto Semiconductors GmbHInventors: Wolfgang Reill, Soenke Tautz, Peter Brick, Uwe Strauss
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Publication number: 20100295438Abstract: A semiconductor light source is provided, the semiconductor light source having a primary radiation source (1) which, when the semiconductor light source is operated, emits electromagnetic primary radiation (5) in a first wavelength range, and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is fed. The luminescence conversion module (2) contains a luminescence conversion element (6) which, by means of a luminescent material, absorbs primary radiation (5) from the first wavelength range and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is arranged on a heat sink (3) at a distance from the primary radiation source (1).Type: ApplicationFiled: September 11, 2008Publication date: November 25, 2010Applicant: OSRAM Opto Semiconductors GmbHInventors: Hubert Ott, Alfred Lell, Sönke Tautz, Uwe Strauss, Frank Baumann, Kirstin Petersen