Patents by Inventor Sören Berg

Sören Berg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100291110
    Abstract: The present invention relates to novel compositions and methods for regulating an immune response in a subject. More particularly, the invention relates to specific antibodies that regulate the activity of NK cells and allow a potentiation of NK cell cytotoxicity in mammalian subjects. The invention also relates to fragments and derivatives of such antibodies, as well as pharmaceutical compositions comprising the same and their uses, particularly in therapy, to increase NK cell activity or cytotoxicity in subjects.
    Type: Application
    Filed: June 10, 2010
    Publication date: November 18, 2010
    Applicants: NOVO NORDISK A/S, INNATE PHARMA S.A., UNIVERSITY OF GENOA
    Inventors: Søren Berg Padkjaer, Alessandro Moretta, Mariella Della Chiesa, Pascale Andre, Laurent Gauthier, Peter Andreas Nicolai Reumert Wagtmann
  • Publication number: 20100247526
    Abstract: Described herein are anti-NKG2A antibodies suitable for human therapy, including humanized versions of murine anti-NKG2A antibody Z270, as well as related methods and materials for producing and using such antibodies. Exemplary complementarity-determining regions (CDRs) sequences and sites for optional amino acid back-substitutions in framework region (FR) and/or CDRs of such antibodies are also described.
    Type: Application
    Filed: June 28, 2007
    Publication date: September 30, 2010
    Applicant: Novo Nordisk A/S
    Inventors: Petrus Johannes Louis Spee, Søren Berg Padkær
  • Publication number: 20090173939
    Abstract: A hybrid wafer comprises a single-crystal SixGe1-x layer (15), where 0?x?1, a high thermal conductivity layer (10), and between the single-crystal SixGe1-x layer (15) and the high thermal conductivity layer (10), an intermediate layer (21) having a thickness of between 1 nanometer and 1 micrometer and comprising at least one amorphous or polycrystalline SixGe1-x layer (21a), where 0?x?1.
    Type: Application
    Filed: April 23, 2007
    Publication date: July 9, 2009
    Inventors: Sören Berg, Jörgen Olsson, Örjan Vallin, Ulf Smith
  • Patent number: 7465378
    Abstract: The invention is a method for obtaining a reactive sputtering process with a reduced or eliminated hysteresis behavior. This is achieved by focusing the ion current onto a small area, a reduced erosion area (14), which is in constant motion along the target (10) to avoid melting of target material. This means that the current density is very high at the reduced erosion area (14) while the average overall current density is significantly lower. The problem with arcing during reactive sputtering will be suppressed since the compound layer is effectively removed if the current density is sufficiently high. Moreover, the high current density results in a substantial increase of the fraction of ionized sputtered species.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: December 16, 2008
    Assignee: Cardinal CG Company
    Inventors: Tomas Nyberg, Sören Berg