Patents by Inventor Sévak Amtablian

Sévak Amtablian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9583660
    Abstract: The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterized in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: February 28, 2017
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Nicolas Karst, Sevak Amtablian, Simon Perraud
  • Patent number: 9502597
    Abstract: The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface (41), a photovoltaic layer (46) obtained by depositing a layer (42) of precursors and by annealing such as to convert the precursors into a semiconductor material, and another semiconductor layer (43) in order to create a pn junction with the photovoltaic layer (46); characterized in that the layer (42) is deposited in a localized manner, such as to leave free at least one area (410) of the electrode on the rear surface (41) placed between two adjacent cells, wherein the annealing step modifies said area (410) which has higher resistivity than the rest of the electrode on the rear surface (41), such as to provide electric insulation between two adjacent cells.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: November 22, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Joel Dufourcq, Sevak Amtablian, Nicolas Karst, Frederic Roux
  • Publication number: 20150020864
    Abstract: The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface (41), a photovoltaic layer (46) obtained by depositing a layer (42) of precursors and by annealing such as to convert the precursors into a semiconductor material, and another semiconductor layer (43) in order to create a pn junction with the photovoltaic layer (46); characterised in that the layer (42) is deposited in a localised manner, such as to leave free at least one area (410) of the electrode on the rear surface (41) placed between two adjacent cells, wherein the annealing step modifies said area (410) which has higher resistivity than the rest of the electrode on the rear surface (41), such as to provide electric insulation between two adjacent cells.
    Type: Application
    Filed: January 9, 2013
    Publication date: January 22, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Joël Dufourcq, Sévak Amtablian, Nicolas Karst, Frédéric Roux
  • Publication number: 20150007866
    Abstract: The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.
    Type: Application
    Filed: January 9, 2013
    Publication date: January 8, 2015
    Inventors: Nicolas Karst, Sévak Amtablian, Simon Perraud