Patents by Inventor Sa K. Ra

Sa K. Ra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of patterning and manufacturing semiconductor devices
    Patent number: 5393373
    Abstract: Methods of hyperfine patterning and manufacturing semiconductor devices. Steps in accordance with the present invention include coating a hemisphere particle layer having hills and valleys on a layer to be etched, the hemisphere particle layer having an etch selectivity higher than that of the first layer, filling the valleys of the hemisphere particle layer with a second layer having an etch selectivity higher than that of the hemisphere particle layer, and etching back the hills of the hemisphere particle layer to expose the first layer by using the second layer as a mask, and etching the first layer. By virtue of the hemisphere particle layer having alternating hills and valleys, it is possible to accomplish a hyperfine patterning of about 0.1 .mu.m. Since the mean size and the density of hills and valleys of the hemisphere layer can be controlled, the pattern size also can be controlled.
    Type: Grant
    Filed: October 12, 1993
    Date of Patent: February 28, 1995
    Assignee: Goldstar Electron Co., Ltd.
    Inventors: Young K. Jun, Sa K. Ra, Dong W. Kim, Hyun H. Seo, Sung C. Kim, Jun K. Kim
  • Methods of patterning and manufacturing semiconductor devices
    Patent number: 5256587
    Abstract: Methods of hyperfine patterning and manufacturing semiconductor devices. Steps in accordance with the present invention include coating a hemisphere particle layer having hills and valleys on a layer to be etched, the hemisphere particle layer having an etch selectivity higher than that of the first layer, filling the valleys of the hemisphere particle layer with a second layer having an etch selectivity higher than that of the hemisphere particle layer, and etching back the hills of the hemisphere particle layer to expose the first layer by using the second layer as a mask, and etching the first layer. By virtue of the hemisphere particle layer having alternating hills and valleys, it is possible to accomplish a hyperfine patterning of about 0.1 .mu.m. Since the mean size and the density of hills and valleys of the hemisphere layer can be controlled, the pattern size also can be controlled.
    Type: Grant
    Filed: July 10, 1992
    Date of Patent: October 26, 1993
    Assignee: GoldStar Electron Co., Ltd.
    Inventors: Young K. Jun, Sa K. Ra, Dong W. Kim, Hyun H. Seo, Sung C. Kim, Jun K. Kim