Abstract: A flat-type fluorescent lamp device includes a first substrate, a plurality of first and second electrodes arranged on the first substrate at fixed intervals, a first fluorescent layer on an entire surface of the first substrate including the first and second electrodes, a second substrate having a plurality of projection portions for maintaining a uniform gap between the first and second substrates, and a second fluorescent layer on the second substrate except at regions of the projection portions that contact the first substrate.

Abstract: A flat-type fluorescent lamp device includes first and second substrates facing each other, a plurality of first electrodes on the first substrate disposed along a first direction, each first electrode having protrusions extending from both sides of the first electrode along the first direction, a plurality of second electrodes on the first substrate, the second electrodes each having concave portions that correspond to the protrusions of the first electrode and convex portions that correspond to regions between the protrusions of the first electrode, a first fluorescent layer on an entire surface of the first substrate including the first and second electrodes, and a second fluorescent layer on the second substrate.

Abstract: Method for forming a metal line in a semiconductor device, which can effectively suppress abnormal oxidation in formation of metal line of tungsten or tungsten silicide, including the steps of (1) forming an insulating material layer on a semiconductor substrate, and forming a conduction line on the insulating material layer, (2) nitriding an exposed surface of the conduction line, and (3) oxidizing the semiconductor substrate including the conduction line having a nitride layer formed on the exposed surface thereof.