Patents by Inventor Saangrut Sangplung
Saangrut Sangplung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10781516Abstract: A chemical deposition apparatus having a chemical deposition chamber formed within the chemical isolation chamber includes a gas seal. The chemical deposition chamber includes a showerhead module having a faceplate with gas inlets to deliver reactor chemistries to a wafer cavity for processing a semiconductor substrate. The showerhead module includes primary exhaust gas outlets to remove reaction gas chemistries and inert gases from the wafer cavity. An inert gas feed delivers seal gas which flows radially inwardly at least partly through a gap between a step of the showerhead module and the pedestal module to form a gas seal. Secondary exhaust gas outlets withdraw at least some of the inert gas flowing through the gap to provide a high Peclet number.Type: GrantFiled: December 20, 2016Date of Patent: September 22, 2020Assignee: Lam Research CorporationInventors: Ramesh Chandrasekharan, Jeremy Tucker, Saangrut Sangplung
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Patent number: 10741365Abstract: A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate including a plurality of first through-holes for distributing gas onto a substrate in the semiconductor processing apparatus, and a porous baffle positioned in a region between the plenum volume and the one or more gas inlets. The one or more gas inlets can include a stem having a small volume to improve purge time. The baffle can be porous and positioned between the stem and the plenum volume to improve flow uniformity and avoid jetting.Type: GrantFiled: March 25, 2015Date of Patent: August 11, 2020Assignee: Lam Research CorporationInventors: Ramesh Chandrasekharan, Saangrut Sangplung, Shankar Swaminathan, Frank L. Pasquale, Hu Kang, Adrien LaVoie
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Patent number: 10378107Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.Type: GrantFiled: September 10, 2015Date of Patent: August 13, 2019Assignee: Lam Research CorporationInventors: Ramesh Chandrasekharan, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Hu Kang, Adrien LaVoie, Edward Augustyniak, Yukinori Sakiyama, Chloe Baldasseroni, Seshasayee Varadarajan, Basha Sajjad, Jennifer L. Petraglia
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Patent number: 10323323Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: GrantFiled: March 8, 2017Date of Patent: June 18, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Patent number: 9920844Abstract: A gas delivery system for a substrate processing system includes first and second valves, a first gas channel, and a cylinder. The first valve includes a first inlet and a first outlet. The first outlet is in fluid communication with a processing chamber of the substrate processing system. The second valve includes a second inlet and a second outlet. The cylinder defines a second gas channel having a first end and a second end. The cylinder is at least partially disposed within the first gas channel such that the cylinder and the first gas channel collectively define a flow channel. The flow channel is in fluid communication with the first end of the second gas channel and with the first inlet. A third gas channel is in fluid communication with the second end of the second gas channel and with the second inlet.Type: GrantFiled: July 22, 2015Date of Patent: March 20, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Karl Leeser, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Ted Minshall, Adrien LaVoie
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Patent number: 9852901Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.Type: GrantFiled: September 2, 2016Date of Patent: December 26, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Sesha Varadarajan, Shankar Swaminathan, Saangrut Sangplung, Frank Pasquale, Ted Minshall, Adrien Lavoie, Mohamed Sabri, Cody Barnett
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Publication number: 20170175269Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: ApplicationFiled: March 8, 2017Publication date: June 22, 2017Inventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Patent number: 9631276Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: GrantFiled: July 22, 2015Date of Patent: April 25, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Publication number: 20170101710Abstract: A chemical deposition apparatus having a chemical deposition chamber formed within the chemical isolation chamber includes a gas seal. The chemical deposition chamber includes a showerhead module having a faceplate with gas inlets to deliver reactor chemistries to a wafer cavity for processing a semiconductor substrate. The showerhead module includes primary exhaust gas outlets to remove reaction gas chemistries and inert gases from the wafer cavity. An inert gas feed delivers seal gas which flows radially inwardly at least partly through a gap between a step of the showerhead module and the pedestal module to form a gas seal. Secondary exhaust gas outlets withdraw at least some of the inert gas flowing through the gap to provide a high Peclet number.Type: ApplicationFiled: December 20, 2016Publication date: April 13, 2017Inventors: Ramesh Chandrasekharan, Jeremy Tucker, Saangrut Sangplung
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Publication number: 20170016115Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.Type: ApplicationFiled: July 22, 2015Publication date: January 19, 2017Inventors: Ramesh Chandrasekharan, Jennifer O'Loughlin, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Adrien LaVoie
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Publication number: 20160372318Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.Type: ApplicationFiled: September 2, 2016Publication date: December 22, 2016Inventors: Sesha VARADARAJAN, Shankar SWAMINATHAN, Saangrut SANGPLUNG, Frank PASQUALE, Ted MINSHALL, Adrien LAVOIE, Mohamed SABRI, Cody BARNETT
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Publication number: 20160340782Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.Type: ApplicationFiled: September 10, 2015Publication date: November 24, 2016Inventors: Ramesh Chandrasekharan, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Hu Kang, Adrien LaVoie, Edward Augustyniak, Yukinori Sakiyama, Chloe Baldasseroni, Seshasayee Varadarajan, Basha Sajjad, Jennifer L. Petraglia
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Patent number: 9460915Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.Type: GrantFiled: September 12, 2014Date of Patent: October 4, 2016Assignee: Lam Research CorporationInventors: Sesha Varadarajan, Shankar Swaminathan, Saangrut Sangplung, Frank Pasquale, Ted Minshall, Adrien LaVoie, Mohamed Sabri, Cody Barnett
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Publication number: 20160147234Abstract: A gas delivery system for a substrate processing system includes first and second valves, a first gas channel, and a cylinder. The first valve includes a first inlet and a first outlet. The first outlet is in fluid communication with a processing chamber of the substrate processing system. The second valve includes a second inlet and a second outlet. The cylinder defines a second gas channel having a first end and a second end. The cylinder is at least partially disposed within the first gas channel such that the cylinder and the first gas channel collectively define a flow channel. The flow channel is in fluid communication with the first end of the second gas channel and with the first inlet. A third gas channel is in fluid communication with the second end of the second gas channel and with the second inlet.Type: ApplicationFiled: July 22, 2015Publication date: May 26, 2016Inventors: Karl Leeser, Saangrut Sangplung, Shankar Swaminathan, Frank Pasquale, Chloe Baldasseroni, Ted Minshall, Adrien LaVoie
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Publication number: 20160079057Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.Type: ApplicationFiled: September 12, 2014Publication date: March 17, 2016Inventors: Sesha Varadarajan, Shankar Swaminathan, Saangrut Sangplung, Frank Pasquale, Ted Minshall, Adrien LaVoie, Mohamed Sabri, Cody Barnett
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Publication number: 20150315706Abstract: A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate including a plurality of first through-holes for distributing gas onto a substrate in the semiconductor processing apparatus, and a porous baffle positioned in a region between the plenum volume and the one or more gas inlets. The one or more gas inlets can include a stem having a small volume to improve purge time. The baffle can be porous and positioned between the stem and the plenum volume to improve flow uniformity and avoid jetting.Type: ApplicationFiled: March 25, 2015Publication date: November 5, 2015Inventors: Ramesh Chandrasekharan, Saangrut Sangplung, Shankar Swaminathan, Frank L. Pasquale, Hu Kang, Adrien LaVoie
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Publication number: 20150004798Abstract: A system for sealing a processing zone in a chemical deposition apparatus is disclosed, which includes a chemical isolation chamber having a deposition chamber formed within the chemical isolation chamber; a showerhead module having a faceplate, the showerhead module including a plurality of inlets which deliver reactor chemistries to a cavity for processing semiconductor substrates and exhaust outlets which remove reactor chemistries and inert gases from the cavity, and an outer plenum configured to deliver an inert gas; a pedestal module configured to support a substrate and which moves vertically to close the cavity with a narrow gap between the pedestal module and a step around an outer portion of the faceplate; and an inert seal gas feed configured to feed the inert seal gas into the outer plenum, and wherein the inert seal gas flows radially inwardly at least partly through the narrow gap to form a gas seal.Type: ApplicationFiled: June 28, 2013Publication date: January 1, 2015Inventors: Ramesh Chandrasekharan, Saangrut Sangplung