Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.

Abstract: A VCSEL device having non-coaxial-with-one-another apertures and/or rotationally asymmetric apertures formed in layer(s) of the VCSEL structure to define more than one spatial mode in a light output in operation of the device. An array of such VCSEL devices configured to have different spatial modes at the output of different constituent VCSEL devices. Spatial asymmetry of structure of the constituent VCSEL devices and, therefore, arrays of VCSEL devices causes the overall light output to form an irregular grid of output spots of light. When the VCSEL array is equipped with an appropriate lens array, the spatial components of the light output of the VCSEL array are caused to overlap in the far at the imaging plane in a multiple spatial (and spectral) mode fashion, thereby reducing speckle in imaging applications.

Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.

Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.

Abstract: Optoelectronic devices having GaInNAsSb, GaInNAsBi or GaInNAsSbBi active layers are disclosed. The optoelectronic devices have an active or absorbing layer, with a bandgap within a range from 0.7 eV and 1.2 eV. The active layer is coupled to a multiplication layer. The multiplication layer is designed to provide a large optical gain with a high signal-to-noise ratio at low light levels at wavelengths up to 1.8 ?m.

Abstract: A stacked superluminescent light-emitting diode having multiple active regions coupled together using and via tunnel junctions. The material compositions of each of the active regions (corresponding quantum wells and/or barriers) differ from one another to provide a controlled different light emission at wavelength (and/or wavelength range) for each junction. In operation of the device, the spectral width of the aggregate light output generated by different junctions is defined by all the junctions, thereby producing a spectrally-broader emission than that of any single, separately taken junction within the device. Thus, the device is configured to operate as a broadband infrared light source.

Abstract: Stacked edge-emitting lasers having multiple active regions coupled together using tunnel junctions. The composition of each of the active regions (quantum wells and/or barriers) differs to provide a controlled different emission wavelength for each junction, when each junction is individually operated at the same fixed temperature. When the device is under operation, a thermal gradient exists across the junctions, and the emission wavelengths of each junction coincide as the different temperature for each junction causes relative wavelength shifts. Thus, the effect of temperature on the emission wavelength of the device is compensated for, producing a narrower linewidth emission.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Abstract: Disclosed herein is a laser structure comprising an active region overlying a GaAs substrate. The active region includes a dilute nitride material. The laser is configured to generate light at wavelengths greater than 1300 nm. Also disclosed herein is a photodetector comprising an absorber layer overlying a GaAs substrate. The absorber layer includes a dilute nitride material. The photodetector is configured to detect light at wavelengths greater than 1300 nm. Exemplary dilute nitride materials may include, but are not limited to, GaInNAs and GaInNAsSb. Embodiments of the disclosure may include a dilute nitride-on-GaAs laser structure and a dilute nitride-on-GaAs photodetector.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Abstract: Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Abstract: Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Abstract: The present invention relates to an analog transmitter using an external cavity laser (ECL) in which specific characteristics of the ECL are enhanced and exploited to improve 2nd and 3rd order distortion while increasing the threshold for the occurrence of deleterious stimulated Brillouin scattering (SBS). The performance of the ECL shows a substantial reduction in distortion occurring over certain narrow ranges of operating temperatures. Optical, electronic, thermal and/or mechanical methods are described that cause this “distortion dip” to be moved to, or created at, stable regions of ECL operation, away from mode hops. Methods are also described that allow the distortion dip to be moved to, or created at, ECL operating regions in which sufficiently high chirp occurs, thereby reducing SBS. Transmitters and other devices employing these and related techniques are also described.

Abstract: The present invention relates to the analog external cavity lasers (ECLs) including designs, materials, methods of manufacturing and methods of use for such ECLs and packages for such ECLs. Numerous criteria are presented that lead to improved cost/performance for ECLs and for systems incorporating such ECLs.

Abstract: The present invention relates to the suppression of nonlinear fiber effects leading to optical noise, particularly Stimulated Brillouin Scattering (SBS), when narrow linewidth light sources are used in optical communication systems, particularly external cavity laser light sources. Various intra-cavity and extra-cavity modulation techniques are described that broaden the output of the laser light source so as to distribute the laser energy among multiple spectral lines and not exceed the SBS threshold. Thermal, mechanical and electrical modulation techniques are described.

Abstract: The present invention relates to the analog external cavity lasers (ECLs) including designs, materials, methods of manufacturing and methods of use for such ECLs and packages for such ECLS. Numerous criteria are presented that lead to improved cost/performance for ECLs and for systems incorporating such ECLs.

Abstract: The present invention relates to an analog transmitter using an external cavity laser (ECL) in which specific characteristics of the ECL are enhanced and exploited to improve 2nd and 3rd order distortion while increasing the threshold for the occurrence of deleterious stimulated Brillouin scattering (SBS). The performance of the ECL shows a substantial reduction in distortion occurring over certain narrow ranges of operating temperatures. Optical, electronic, thermal and/or mechanical methods are described that cause this “distortion dip” to be moved to, or created at, stable regions of ECL operation, away from mode hops. Methods are also described that allow the distortion dip to be moved to, or created at, ECL operating regions in which sufficiently high chirp occurs, thereby reducing SBS. Transmitters and other devices employing these and related techniques are also described.