Patents by Inventor Sabih U. Omar

Sabih U. Omar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN
    Publication number: 20240088132
    Abstract: An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.
    Type: Application
    Filed: September 13, 2022
    Publication date: March 14, 2024
    Applicant: Intel Corporation
    Inventors: Nicholas A. Thomson, Kalyan C. Kolluru, Ayan Kar, Chu-Hsin Liang, Benjamin Orr, Biswajeet Guha, Brian Greene, Chung-Hsun Lin, Sabih U. Omar, Sameer Jayanta Joglekar
  • Optically switched graphene/4H-SiC junction bipolar transistor
    Patent number: 9966491
    Abstract: A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: May 8, 2018
    Assignee: University of South Carolina
    Inventors: MVS Chandrashekhar, Tangali S. Sudarshan, Sabih U. Omar, Gabriel Brown, Shamaita S. Shetu
  • OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR
    Publication number: 20160315211
    Abstract: A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.
    Type: Application
    Filed: February 22, 2016
    Publication date: October 27, 2016
    Inventors: MVS Chandrashekhar, Tangali S. Sudarshan, Sabih U. Omar, Gabriel Brown, Shamaita S. Shetu