Abstract: The present invention is directed to methods of identifying and treating a human subject harboring a tumor or other disease comprising assessing HRG gene expression at a protein level in the human subject and administering a treatment comprising an anti-HER3 antibody to the human subject whose HRG gene expression at a protein level is assessed as high. The present invention is also directed to methods of identifying a human subject harboring a tumor or other disease comprising assessing HRG gene expression at a protein level in the human subject and withholding a treatment comprising an anti-HER3 antibody to the human subject whose HRG gene expression at a protein level is assessed as low.

Abstract: A device for fastening tank insert parts, wherein the device has a holding element for holding the tank insert part and at least one elastically deformable clamping device which is connected to the holding element and by means of which a fastening structure can be received. Furthermore, a plastic tank having a fastening structure which is arranged in the interior thereof, and having a device according to the invention which is arranged thereon for fastening tank insert parts.

Abstract: A device for fastening tank insert parts, wherein the device has a holding element for holding the tank insert part and at least one elastically deformable clamping device which is connected to the holding element and by means of which a fastening structure can be received. Furthermore, a plastic tank having a fastening structure which is arranged in the interior thereof, and having a device according to the invention which is arranged thereon for fastening tank insert parts.

Abstract: A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Abstract: A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.