Abstract: In one embodiment of the present invention, an MRAM is an MRAM including: a plurality of write word lines; a plurality of bit lines provided so as to intersect with the write word lines; and TMR elements provided at respective intersections of the write word lines and the bit lines. Each of the TMR elements includes a first ferromagnetic layer of which magnetization direction is variable, a second ferromagnetic layer of which magnetization direction is fixed, and a tunnel wall which is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The bit line is provided, for example, so as to bulge in the direction in which the write word line extends at the intersection of the bit line and the write word line, so that a magnetic wall is introduced at a desired position of the bit line. Further, a current fed through the bit line is fed through the first ferromagnetic layer at the time of data writing. This makes it possible to provide the MRAM having a gigabit-class capacity.