Patents by Inventor Sachiaki Teduka
Sachiaki Teduka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9054206Abstract: After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.Type: GrantFiled: August 1, 2008Date of Patent: June 9, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Foruno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara
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Patent number: 8263421Abstract: An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.Type: GrantFiled: November 12, 2010Date of Patent: September 11, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Furuno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara
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Publication number: 20110059562Abstract: An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.Type: ApplicationFiled: November 12, 2010Publication date: March 10, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Sachiaki TEDUKA, Satoshi TORIUMI, Makoto FURUNO, Yasuhiro JINBO, Koji DAIRIKI, Hideaki KUWABARA
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Patent number: 7833845Abstract: An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.Type: GrantFiled: August 12, 2008Date of Patent: November 16, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Furuno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara
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Patent number: 7611930Abstract: In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10?5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.Type: GrantFiled: August 5, 2008Date of Patent: November 3, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Sachiaki Teduka, Makoto Furuno, Satoshi Toriumi, Yasuhiro Jinbo, Koji Dairiki
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Publication number: 20090047759Abstract: After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.Type: ApplicationFiled: August 1, 2008Publication date: February 19, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Furuno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara
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Publication number: 20090047758Abstract: In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10?5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.Type: ApplicationFiled: August 5, 2008Publication date: February 19, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Sachiaki TEDUKA, Makoto FURUNO, Satoshi TORIUMI, Yasuhiro JINBO, Koji DAIRIKI
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Publication number: 20090047761Abstract: An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.Type: ApplicationFiled: August 12, 2008Publication date: February 19, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Furuno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara