Abstract: To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group.

Abstract: To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group.

Abstract: An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.

Abstract: To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group.

Abstract: An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.

Abstract: A polishing compound and a polishing method are provided, whereby in a CMP process in a process for production of a semiconductor device, a metal layer and/or a barrier layer, etc., can be polished while suppressing excessive oxidation of the metal layer, and the polishing rate can be adjusted depending upon the application. A polishing compound comprising polishing abrasive grains and a peptide, a polishing compound slurry having such a polishing compound suspended in an aqueous medium, preferably together with an oxidizing agent and preferably at a pH of at least 7, and a method for polishing a metal layer of e.g. Cu and/or a barrier layer, formed on a semiconductor substrate, by polishing with an abrasive cloth of a CMP apparatus having such a polishing compound slurry supported thereon, are disclosed.