Patents by Inventor Sachiko Okumura

Sachiko Okumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7268529
    Abstract: The present invention provides a band gap type reference voltage generating circuit and a semiconductor integrated circuit having the same, capable of generating a reference voltage of about 1.2V or less whose temperature dependency is low, and realizing reduced offset voltage dependency of a differential amplifier. A band gap part has: a first resistor and a first bipolar transistor connected in series between power supply voltage terminals; a second resistor, a second bipolar transistor, and a third resistor connected in series between the power supply voltage terminals; and a differential amplifier that receives voltages generated by the first and second resistors, and an output of the differential amplifier is applied to the bases of the two transistors.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: September 11, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Toshio Mochizuki, Eiki Imaizumi, Sachiko Okumura
  • Publication number: 20070052405
    Abstract: The present invention provides a band gap type reference voltage generating circuit and a semiconductor integrated circuit having the same, capable of generating a reference voltage of about 1.2V or less whose temperature dependency is low, and realizing reduced offset voltage dependency of a differential amplifier. A band gap part has: a first resistor and a first bipolar transistor connected in series between power supply voltage terminals; a second resistor, a second bipolar transistor, and a third resistor connected in series between the power supply voltage terminals; and a differential amplifier that receives voltages generated by the first and second resistors, and an output of the differential amplifier is applied to the bases of the two transistors.
    Type: Application
    Filed: September 6, 2006
    Publication date: March 8, 2007
    Inventors: Toshio Mochizuki, Eiki Imaizumi, Sachiko Okumura