Patents by Inventor Sachin V. Joshi

Sachin V. Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistance variable memory cell structures and methods
    Patent number: 9590014
    Abstract: Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: March 7, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Sachin V. Joshi, F. Daniel Gealy
  • RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS
    Publication number: 20160035791
    Abstract: Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure.
    Type: Application
    Filed: October 7, 2015
    Publication date: February 4, 2016
    Inventors: Sachin V. Joshi, F. Daniel Gealy
  • Resistance variable memory cell structures and methods
    Patent number: 9184377
    Abstract: Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: November 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Sachin V. Joshi, F Daniel Gealy
  • RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS
    Publication number: 20140361238
    Abstract: Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure.
    Type: Application
    Filed: June 11, 2013
    Publication date: December 11, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Sachin V. Joshi, F. Daniel Gealy