Abstract: A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution: M?(?4-O)?(?3-O)?(?-O)?(?-ORA)?(ORA)?(RAOH)?X?Y???(A) (wherein M represents a niobium atom, etc.; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; ? represents an integer of 3 to 10; ? represents 0 or 1; ? represents an integer of 0 to 8; ? represents an integer of 2 to 9; ? represents an integer of 0 to 6; ? represents an integer of 6 to 16; ? represents an integer of 0 to 4; ? represents an integer of 0 to 2; and ? represents an integer of 0 to 6).

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Abstract: A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution: M?(?4-O)?(?3-O)?(?-O)?(?-ORA)?(ORA)?(RAOH)?X?Y???(A) (wherein M represents a niobium atom, etc.; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; ? represents an integer of 3 to 10; ? represents 0 or 1; ? represents an integer of 0 to 8; ? represents an integer of 2 to 9; ? represents an integer of 0 to 6; ? represents an integer of 6 to 16; ? represents an integer of 0 to 4; ? represents an integer of 0 to 2; and ? represents an integer of 0 to 6).

Abstract: An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.