Patents by Inventor Sachio Karino
Sachio Karino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8802458Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.Type: GrantFiled: January 11, 2012Date of Patent: August 12, 2014Assignee: Sony CorporationInventors: Makoto Nakashima, Takahiro Yokoyama, Sachio Karino
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Patent number: 8619829Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.Type: GrantFiled: June 10, 2010Date of Patent: December 31, 2013Assignee: Sony CorporationInventors: Yuta Yoshida, Sachio Karino, Takahiro Yokoyama, Makoto Nakashima, Eiji Takase
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Patent number: 8619826Abstract: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.Type: GrantFiled: June 9, 2010Date of Patent: December 31, 2013Assignee: Sony CorporationInventors: Makoto Nakashima, Takahiro Yokoyama, Sachio Karino, Eiji Takase, Yuta Yoshida
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Patent number: 8409893Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: GrantFiled: January 23, 2012Date of Patent: April 2, 2013Assignee: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Patent number: 8320421Abstract: A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.Type: GrantFiled: May 20, 2008Date of Patent: November 27, 2012Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Publication number: 20120122257Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: ApplicationFiled: January 23, 2012Publication date: May 17, 2012Applicant: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Publication number: 20120107972Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.Type: ApplicationFiled: January 11, 2012Publication date: May 3, 2012Applicant: SONY CORPORATIONInventors: Makoto Nakashima, Takahiro Yokoyama, Sachio Karino
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Patent number: 8138002Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: GrantFiled: August 11, 2009Date of Patent: March 20, 2012Assignee: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Patent number: 8130804Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.Type: GrantFiled: October 23, 2009Date of Patent: March 6, 2012Assignee: Sony CorporationInventors: Makoto Nakashima, Takahiro Yokoyama, Sachio Karino
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Publication number: 20120009711Abstract: A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.Type: ApplicationFiled: September 21, 2011Publication date: January 12, 2012Applicant: SONY CORPORATIONInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Patent number: 8058660Abstract: Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.Type: GrantFiled: September 11, 2008Date of Patent: November 15, 2011Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Patent number: 7915625Abstract: Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.Type: GrantFiled: September 11, 2008Date of Patent: March 29, 2011Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Patent number: 7903713Abstract: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N?2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.Type: GrantFiled: March 5, 2009Date of Patent: March 8, 2011Assignee: Sony CorporationInventor: Sachio Karino
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Publication number: 20110002354Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.Type: ApplicationFiled: June 10, 2010Publication date: January 6, 2011Applicant: SONY CORPORATIONInventors: Yuta Yoshida, Sachio Karino, Takahiro Yokoyama, Makoto Nakashima, Eiji Takase
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Publication number: 20100329295Abstract: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.Type: ApplicationFiled: June 9, 2010Publication date: December 30, 2010Applicant: SONY CORPORATIONInventors: Makoto Nakashima, Takahiro Yokoyama, Sachio Karino, Eiji Takase, Yuta Yoshida
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Publication number: 20100111129Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.Type: ApplicationFiled: October 23, 2009Publication date: May 6, 2010Applicant: SONY CORPORATIONInventors: Makoto Nakashima, Takahiro Yokoyama, Sachio Karino
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Publication number: 20100047947Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: ApplicationFiled: August 11, 2009Publication date: February 25, 2010Applicant: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Publication number: 20100019255Abstract: There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion (20) composed of a first compound semiconductor layer (abbreviated as a layer hereinafter) (21) having a first conductivity type, an active layer (23), and a second layer (22) having a second conductivity type, and (B) a current-blocking layer (40) in contact with the side of the light-emitting portion and composed of a third layer (43) having the first conductivity type and a fourth layer (44) having the second conductivity type, wherein the impurity for imparting the first conductivity type to the first layer (21) includes an impurity in the first layer (21) at a substitution site which is uncompetitive with a substitution site of the impurity in the second layer (22), for imparting the second conductivity type to the second layer (22), and the impurity for imparting the first conductivity type to the third layer (43) incluType: ApplicationFiled: May 20, 2008Publication date: January 28, 2010Applicant: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Publication number: 20090245313Abstract: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N?2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.Type: ApplicationFiled: March 5, 2009Publication date: October 1, 2009Applicant: SONY CORPORATIONInventor: Sachio KARINO
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Publication number: 20090072253Abstract: Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.Type: ApplicationFiled: September 11, 2008Publication date: March 19, 2009Applicant: SONY CORPORATIONInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano