Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: One embodiment of a method of processing a semiconductor wafer having a peripheral portion includes providing external support structure and restraining radially inward displacement of the wafer peripheral portion with the external support structure.