Abstract: A trench forming method for forming trenches without creating gouges at the boundary between a masking oxide film and a semiconductor layer and at the boundary between an oxide film insulating layer and the semiconductor layer, includes at least three etching steps each using, as the etching gas, one of at least two types of etching gases that respectively contain different components.

Abstract: A trench forming method for forming trenches without creating gouges at the boundary between a masking oxide film and a semiconductor layer and at the boundary between an oxide film insulating layer and the semiconductor layer, includes at least three etching steps each using, as the etching gas, one of at least two types of etching gases that respectively contain different components.

Abstract: A method of producing a semiconductor device includes the steps of: preparing a base member; laminating sequentially a barrier film formed of titanium nitride, a wiring portion film formed of tungsten, and a mask film formed of titanium nitride on the base member to form a multi-layer film; forming a resist mask on the mask film so that the resist mask covers a wiring portion forming area and exposes a wiring portion non-forming area; etching the mask film using a first gas in which titanium nitride has a large etching ratio with respect to tungsten; and etching the wiring portion film using a second gas in which tungsten has a large etching ratio with respect to titanium nitride so that a portion of the wiring portion film in the wiring portion non-forming area is removed and a portion of the wiring portion film in the wiring portion forming area remains.

Abstract: A method of producing a semiconductor device includes the steps of: preparing a base member; laminating sequentially a barrier film formed of titanium nitride, a wiring portion film formed of tungsten, and a mask film formed of titanium nitride on the base member to form a multi-layer film; forming a resist mask on the mask film so that the resist mask covers a wiring portion forming area and exposes a wiring portion non-forming area; etching the mask film using a first gas in which titanium nitride has a large etching ratio with respect to tungsten; and etching the wiring portion film using a second gas in which tungsten has a large etching ratio with respect to titanium nitride so that a portion of the wiring portion film in the wiring portion non-forming area is removed and a portion of the wiring portion film in the wiring portion forming area remains.

Abstract: A rotating-shaft seal section protective plate including a cylindrical section that covers the periphery of part of a rotating shaft, a small-diameter flange-shaped section formed at an end on the rotor side, of the cylindrical section, and a large-diameter flange-shaped section formed at an end on the rotating-shaft seal section side, of the cylindrical section, is disposed between the rotor and the rotating-shaft seal section. The rotating-shaft seal section protective plate divides the interior of a chamber into a portion on the rotor side and a portion on the rotating-shaft seal section side by means of the large-diameter flange-shaped section and leads a liquid injection medium (corresponding to each of a peeling liquid and a cleaning liquid) to the discharge port by means of the small-diameter flange-shaped portion.