Abstract: In a contact type image sensor prepared by disposing a plurality of sandwich type photoelectric conversion elements each of which is obtained by sandwiching an amorphous semiconductor layer as a photoelectric conversion layer between a metal electrode and a light-transmissive electrode, the amorphous semiconductor layer is insulated and separated by means of a silicon oxide layer in every element. The silicon oxide layer is obtained by oxidizing selectively the amorphous semiconductor layer in accordance with the optically assisted anodizing process.

Abstract: An elongated image sensor comprises a plurality of light receiving elements of a sandwich structure arranged in a row and wherein a photoconductive layer is sandwiched by a lower electrode and a light-permeable upper electrode. In the image sensor, an overlapped region of the lower and upper electrodes for each of the light receiving elements is made larger in area than a light reception region and the light reception area (sensor area) is defined by a light shielding means or an insulating film having an opening of a predetermined size.

Abstract: A photoconductive element is described, comprising an amorphous silicon sensor and a transparent, insulative protective layer on the sensor, said protective layer comprising polymers or copolymers (including terpolymers, etc.) having one of four specific types of recurring units, or mixtures thereof, or polymer compositions composed mainly of the above polymers or copolymers; such a photoconductive element shows reduced damage of the sensor as compared to the conventional technique, and permits increases in productivity and decreases in production costs.

Abstract: An elongated image sensor comprises a plurality of light receiving elements of a sandwich structure arranged in a row and wherein a photoconductive layer is sandwiched by a lower electrode and a light-permeable upper electrode. In the image sensor, an overlapped region of the lower and upper electrodes for each of the light receiving elements is made larger in area than a light reception region and the light reception area (sensor area) is defined by a light shielding means or an insulating film having an opening of a predetermined size.

Abstract: A photoelectric converting device in which a photoelectric converting part is covered directly with a passivation film made of a silicone resin. The passivation film is made by directly applying on the photoelectric converting part a mixture of silicone base polymer having a number-average molecular weight of 6000 to 9000 and a weight-average molecular weight of 30000 to 40000, and silicone oligomer having a molecular weight of 600 to 1500, and then by heating the mixture at a low temperature for its hardening.

Abstract: A contact type color image sensor comprises a photoelectric converting section comprising a plurality of photoelectric converting elements of sandwich type in which a metallic electrode, a photoelectric converting layer and a light permeable electrode are sequentially formed on an elongated substrate, and a color filtering layer formed on a light receiving area of said photoelectric converting section, wherein said color filter layer comprises a dyeable polymer layer dyed a desirable color.

Abstract: In a sandwich type image sensor having a photoelectric converting portion comprising a photoelectric conductive layer interposed between an upper electrode and a lower electrode, a light-shielding means is provided for selectively covering an end portion of the photoelectric conductive layer so as to be excluded from a light-receiving area of the converting portion. Alternatively, an insulating layer partly blocking the contact between the photoelectric conductive layer and the lower electrode is provided for effectively defining the light-receiving area of the converting portion. In an example where the photoelectric is divided so that it is operable as those of a plurality of sensor elements arranged in a row, a light-shielding means is provided for defining light-receiving areas of the sensor elements, while overlapping areas of the upper and lower electrodes are adjusted for equalizing the stray capacitances of the sensor elements inclusive of their connecting portions.

Abstract: A flexible insulating substrate is fed through an amorphous semiconductor layer forming region, and an amorphous semiconductor layer is formed on the substrate continuously and in a wide range along its length. In this manner, an array of photoelectric converting elements is formed continuously along the length of the flexible substrate, the substrate thus formed with the array is cut into a plurality of chips, and each chip having the elements is bonded onto a member supporting driving circuits thereby producing a contact type image sensor capable of sensing a wide range of image simultaneously.