Patents by Inventor Sadamu Ishidu
Sadamu Ishidu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170152425Abstract: An AlN sintered compact includes AlN crystal grains and a grain boundary phase, and the grain boundary phase is lower in Vickers hardness than the AlN crystal grains.Type: ApplicationFiled: April 14, 2015Publication date: June 1, 2017Inventors: Hideaki Awata, Katsuhito Yoshida, Koichi Sogabe, Yoshiyuki Hirose, Yasushi Itoh, Noboru Uenishi, Yuka Kondo, Sadamu Ishidu, Takehisa Yamamoto
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Publication number: 20140124700Abstract: An AlN substrate with excellent heat transfer efficiency between it and another member to be bonded to a bonding surface of the AlN substrate. The AlN substrate is composed of an AlN sintered body containing group 2A and 3A elements, and the surface roughness Ra of the bonding surface is 3 nm or less, and, in voids having long diameters of 0.25 ?m or more, the mean value is 1.5 ?m or less, and the maximum value is 1.8 ?m or less. A method for producing the AlN substrate includes sintering a precursor formed of a sintering material that contains 88.7 to 98.5 mass % with respect to AlN, 0.01 to 0.3 mass % with respect to a group 2A element in oxide equivalent, and 0.05 to 5 mass % with respect to a group 3A element in oxide equivalent to form a sintered body, and applying HIP treatment onto the sintered body.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Inventors: Takehisa Yamamoto, Sadamu Ishidu
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Patent number: 7897990Abstract: A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 ?m and the center-line average roughness Ra of the surface is no more than 0.1 ?m. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.Type: GrantFiled: February 22, 2005Date of Patent: March 1, 2011Assignee: Sumitomo Electric Industries, Ltd.Inventors: Teruo Amoh, Sadamu Ishidu, Kenjiro Higaki, Yasushi Tsuzuki, Hiroshi Fukuda
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Patent number: 7737562Abstract: A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin.Type: GrantFiled: November 28, 2007Date of Patent: June 15, 2010Assignee: A. L. M. T. Corp.Inventors: Kenjiro Higaki, Daisuke Takagi, Sadamu Ishidu, Yasushi Tsuzuki
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Patent number: 7649270Abstract: A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles ?1, ?2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL).Type: GrantFiled: July 21, 2005Date of Patent: January 19, 2010Assignee: A. L. M. T. Corp.Inventors: Kenjiro Higaki, Daisuke Takagi, Sadamu Ishidu, Yasushi Tsuzuki
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Patent number: 7622203Abstract: Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 ?m/mm or more and less than 2 ?m/mm, and a local waviness height of 0 ?m or more and 100 ?m or less.Type: GrantFiled: July 30, 2003Date of Patent: November 24, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yasushi Itoh, Sadamu Ishidu, Yasushi Tsuzuki
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Patent number: 7518155Abstract: The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.Type: GrantFiled: March 15, 2004Date of Patent: April 14, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Patent number: 7504671Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.Type: GrantFiled: October 30, 2007Date of Patent: March 17, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Patent number: 7491980Abstract: A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.Type: GrantFiled: August 18, 2004Date of Patent: February 17, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenjiro Higaki, Sadamu Ishidu, Teruo Amoh, Yasushi Tsuzuki
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Publication number: 20090001396Abstract: A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin.Type: ApplicationFiled: November 28, 2007Publication date: January 1, 2009Inventors: Kenjiro Higaki, Daisuke Takagi, Sadamu Ishidu, Yasushi Tsuzuki
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Patent number: 7420223Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.Type: GrantFiled: October 30, 2007Date of Patent: September 2, 2008Assignee: Sumitomo Electric Industries, Ltd.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Publication number: 20080203420Abstract: A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles ?1, ?2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL).Type: ApplicationFiled: July 21, 2005Publication date: August 28, 2008Inventors: Kenjiro Higaki, Daisuke Takagi, Sadamu Ishidu, Yasushi Tsuzuki
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Publication number: 20080105894Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.Type: ApplicationFiled: October 30, 2007Publication date: May 8, 2008Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Publication number: 20080067540Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.Type: ApplicationFiled: October 30, 2007Publication date: March 20, 2008Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Patent number: 7335925Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.Type: GrantFiled: March 8, 2004Date of Patent: February 26, 2008Assignee: Sumitomo Electric Industries, Ltd.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Publication number: 20070215895Abstract: A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 ?m and the center-line average roughness Ra of the surface is no more than 0.1 ?m. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.Type: ApplicationFiled: February 22, 2005Publication date: September 20, 2007Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTDInventors: Teruo Amoh, Sadamu Ishidu, Kenjiro Higaki, Yasushi Tsuzuki, Hiroshi Fukuda
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Publication number: 20060220050Abstract: A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.Type: ApplicationFiled: August 18, 2004Publication date: October 5, 2006Applicant: Sumitomo Electric Industries, Ltd.Inventors: Kenjiro Higaki, Sadamu Ishidu, Teruo Amoh, Yasushi Tsuzuki
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Publication number: 20060198162Abstract: The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.Type: ApplicationFiled: March 15, 2004Publication date: September 7, 2006Applicant: Sumitomo Electric Industries, Ltd.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Publication number: 20060118808Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.Type: ApplicationFiled: March 8, 2004Publication date: June 8, 2006Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Sadamu Ishidu, Kenjiro Higaki, Takashi Ishii, Yasushi Tsuzuki
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Publication number: 20050269749Abstract: Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 ?m/mm or more and less than 2 ?m/mm, and a local waviness height of 0 ?m or more and 100 ?m or less.Type: ApplicationFiled: July 30, 2003Publication date: December 8, 2005Inventors: Yasushi Itoh, Sadamu Ishidu, Yasushi Tsuzuki