Patents by Inventor Sadao Kanbe

Sadao Kanbe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6636341
    Abstract: A method is provided for manufacturing an electrophoretic display device that includes a pair of substrates and a rib that partitions a space into a plurality of cells. The method comprises the steps of applying a liquid included in common by all the cells by using an application device, and allowing a discharge device to separately discharge a plurality of liquids so that the liquids differ in composition with respect to each of the plurality of cells and thereby fill in respective cells.
    Type: Grant
    Filed: October 23, 2001
    Date of Patent: October 21, 2003
    Assignee: Seiko Epson Corporation
    Inventor: Sadao Kanbe
  • Publication number: 20030134519
    Abstract: Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.
    Type: Application
    Filed: January 29, 2003
    Publication date: July 17, 2003
    Applicant: Seiko Epson Corporation
    Inventors: Ichio Yudasaka, Tatsuya Shimoda, Sadao Kanbe, Wakao Miyazawa
  • Patent number: 6593591
    Abstract: Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: July 15, 2003
    Assignee: Seiko Epson Corporation
    Inventors: Ichio Yudasaka, Tatsuya Shimoda, Sadao Kanbe, Wakao Miyazawa
  • Publication number: 20030054186
    Abstract: A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.
    Type: Application
    Filed: July 8, 1998
    Publication date: March 20, 2003
    Inventors: SATORU MIYASHITA, HIROSHI KIGUCHI, TATSUYA SHIMODA, SADAO KANBE
  • Publication number: 20020179906
    Abstract: Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.
    Type: Application
    Filed: July 9, 2002
    Publication date: December 5, 2002
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Ichio Yudasaka, Tatsuya Shimoda, Sadao Kanbe, Wakao Miyazawa
  • Publication number: 20020166771
    Abstract: [Problem] A conventional ink jet process invites clogging of nozzles due to precipitation of charged particles, thereby making it difficult to manufacture an electrophoretic display device using the conventional ink jet process.
    Type: Application
    Filed: October 23, 2001
    Publication date: November 14, 2002
    Inventor: Sadao Kanbe
  • Publication number: 20020155215
    Abstract: A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.
    Type: Application
    Filed: June 12, 2002
    Publication date: October 24, 2002
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Satoru Miyashita, Hiroshi Kiguchi, Tatsuya Shimoda, Sadao Kanbe
  • Publication number: 20020149835
    Abstract: Problem
    Type: Application
    Filed: October 29, 2001
    Publication date: October 17, 2002
    Inventor: Sadao Kanbe
  • Publication number: 20020136823
    Abstract: A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.
    Type: Application
    Filed: July 10, 2001
    Publication date: September 26, 2002
    Applicant: Seiko Epson Corporation
    Inventors: Satoru Miyashita, Hiroshi Kiguchi, Tatsuya Shimoda, Sadao Kanbe
  • Publication number: 20020100908
    Abstract: Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.
    Type: Application
    Filed: June 4, 1999
    Publication date: August 1, 2002
    Inventors: ICHIO YUDASAKA, TATSUYA SHIMODA, SADAO KANBE, WAKAO MIYAZAWA
  • Publication number: 20020074547
    Abstract: Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.
    Type: Application
    Filed: July 10, 2001
    Publication date: June 20, 2002
    Applicant: Seiko Epson Corporation
    Inventors: Ichio Yudasaka, Tatsuya Shimoda, Sadao Kanbe, Wakao Miyazawa
  • Publication number: 20020041926
    Abstract: A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.
    Type: Application
    Filed: October 24, 2001
    Publication date: April 11, 2002
    Applicant: Seiko Epson Corporation
    Inventors: Satoru Miyashita, Hiroshi Kiguchi, Tatsuya Shimoda, Sadao Kanbe
  • Publication number: 20010001050
    Abstract: A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound by means of an ink-jet method. According to this method, it is possible to carry out a high precise patterning easily and in a short time, thereby enabling to carry out optimization for a film design and luminescent characteristic easily as well as making it easy to adjust a luminous efficiency.
    Type: Application
    Filed: December 8, 2000
    Publication date: May 10, 2001
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Satoru Miyashita, Hiroshi Kiguchi, Tatsuya Shimoda, Sadao Kanbe
  • Patent number: 5989945
    Abstract: Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.
    Type: Grant
    Filed: February 13, 1998
    Date of Patent: November 23, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Ichio Yudasaka, Tatsuya Shimoda, Sadao Kanbe, Wakao Miyazawa
  • Patent number: 5952129
    Abstract: A process of making a color filter includes a first step of producing a master having a plurality of ink charging recesses arranged in a given pattern, a second step of charging ink of preselected colors into the ink charging recesses to form an ink layer, a third step of forming a resin layer over the master into which the ink have been charged and a fourth step of separating the ink layer and the resin layer together from the master after these layers have been cured.
    Type: Grant
    Filed: September 26, 1996
    Date of Patent: September 14, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Hiroshi Kiguchi, Takao Nishikawa, Tatsuya Shimoda, Masaru Kojima, Sadao Kanbe
  • Patent number: 5236483
    Abstract: A method for preparing a silica glass article of improved purity is provided. The article is prepared by a sol-gel method and is then heat treated to a selected temperature between about 1500.degree. and 2200.degree. C. and maintained at the selected temperature for a predetermined period of time sufficient to remove silica crystals, inclusions, microcracks and bubbles. The resulting silica glass articles have improved purity and can be used as photomask substrates or as preforms for optical fibers.
    Type: Grant
    Filed: October 30, 1992
    Date of Patent: August 17, 1993
    Assignee: Seiko Epson Corporation
    Inventors: Satoru Miyashita, Sadao Kanbe, Motoyuki Toki, Tetsuhiko Takeuchi, Hirohito Kitabayashi
  • Patent number: 4801318
    Abstract: In a forming a silica glass at low temperature, a fumed silica is added to a hydrolyzed solution of a metal alcoxide. 0.2-5 mol of fumed silica is added to 1 mol of metal alcoxide. Being uniformly dispersed, the solution is gelled and dried to be dry gel and then sintered to be non-porous. This process allows a practically large sized silica glass to be materialized which has been impossible by the previous sol-gel technology. In addition, a further large silica glass can be prepared by adjusting pH value to 3-6 with addition of base in the sol solution.
    Type: Grant
    Filed: January 29, 1987
    Date of Patent: January 31, 1989
    Assignee: Seiko Epson Corporation
    Inventors: Motoyuki Toki, Sadao Kanbe, Satoru Miyashita, Tetsuhiko Takeuchi
  • Patent number: 4786302
    Abstract: A sol-gel process for preparing dimensionally precise tubular silica glass articles wherein a solution having a specific gravity higher than the specific gravity of the sol solution is placed in a cylindrical container with the sol solution is provided. The container is rotated around its axis and the high specific gravity solution becomes aligned adjacent the inner wall of the cylindrical container due to the effect of centrifugal forces acting on the high specific gravity solution. The sol solution becomes aligned adjacent the inner surface of the high specific gravity solution. The tubular wet gel formed from the sol solution has a uniform thickness and a highly precise round cross-section. The dimensional precision of the wet gel is maintained by rotating the wet gel during drying in order to prevent warping.
    Type: Grant
    Filed: July 13, 1987
    Date of Patent: November 22, 1988
    Assignee: Seiko Epson Corporation
    Inventors: Haruo Osafune, Sadao Kanbe, Teiichiro Mori, Masahisa Ikejiri
  • Patent number: 4681615
    Abstract: A process for forming monolithic silica glass articles is provided. The process includes the steps of hydrolyzing silicon alkoxide to form a hydrolyzed solution, adding fumed silica to the hydrolyzed silicon alkoxide solution to yield a sol solution, gelling the sol solution to a gel, and drying and sintering the gel to obtain the monolithic silica glass articles.
    Type: Grant
    Filed: August 20, 1984
    Date of Patent: July 21, 1987
    Assignee: Seiko Epson Kabushiki Kaisha
    Inventors: Motoyuki Toki, Sadao Kanbe, Satoru Miyashita, Tetsuhiko Takeuchi
  • Patent number: 4680048
    Abstract: A sol-gel method of preparing doped glass articles is provided. The glass is formed by preparing a sol solution containing hydrolyzed silicon alkoxide and ultrafine particle silica. The sol solution can also include a dopant. The sol solution is gelled in a container, dried and sintered to yield the doped silica glass articles.
    Type: Grant
    Filed: October 1, 1985
    Date of Patent: July 14, 1987
    Assignee: Seiko Epson Kabushiki Kaisha
    Inventors: Masanobu Motoki, Nobutaka Matsuo, Sadao Kanbe, Haruo Osafune, Yoshitaka Itoh