Abstract: A non-Dash neck method of preparing a single crystal silicon rod, pulled in accordance with the Czochralski method. The process is characterized in that a large diameter, dislocation-free seed crystal is allowed to thermally equilibrate prior to initiation of silicon rod growth, in order to avoid the formation of dislocations resulting from thermal shock to the crystal. The process is further characterized in that a resistance heater is used to melt the lower tip of the seed crystal to form a molten cap before it is brought into contact with the melt. The process yields a single crystal silicon rod having a short, large diameter neck which is dislocation-free, and which is capable of supporting a silicon rod which weighs at least about 100 kilograms during growth and subsequent handling.

Abstract: An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.

Abstract: A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history from a silicon melt contained in a crucible coaxial with the ingot. In the process the pulling rate of the end-cone of the ingot is maintained at a relatively constant rate which is comparable to the pulling rate for the second half of the main body of the ingot. During the pulling of the end-cone of the crystal at a constant rate, the process may be further refined by, either independently or in combination, increasing the heat supplied to the melt, reducing the crystal rotation rate and/or reducing the crucible rotation rate. The second half of the main body of a single crystal silicon ingot grown in accordance with this process exhibits a relatively uniform axial concentration of flow pattern defects and amount of oxygen precipitated.

Abstract: A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.

Abstract: A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.