Abstract: A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor laser element. The package has a vent for introducing and/or exhausting a low heat conduction type gas into or from the package. The vent is hermetically sealed by swaging and welding the external end thereof after the low heat conduction type gas has been introduced into or exhausted form the package.

Abstract: A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor laser element. The package has a vent for introducing and/or exhausting a low heat conduction type gas into or from the package. The vent is hermetically sealed by swaging and welding the external end thereof after the low heat conduction type gas has been introduced into or exhausted form the package.

Abstract: At least one bevel is formed on the top of a heat sink on which a semiconductor laser diode is placed, the bevel being sloped from either side of first or second optical system downwardly toward the bottom of the heat sink. Thus, the heat radiation area of the heat sink can be increased without blocking of the laser beam emitted from the semiconductor laser diode and without engagement of the heat sink with the first and second optical systems. As a result, the optical output of a semiconductor laser module using such a semiconductor laser diode can be increased. The semiconductor laser module can be applied to even a pump light source used in Raman amplification and required to have a high-power.