Abstract: A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x<y) layer and the optical guiding layer. The AlAs mole fraction y of the optical guiding layer is greater than 0.1.

Abstract: A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.

Abstract: A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.

Abstract: An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.

Abstract: A semiconductor laser array includes a plurality of first wave guides extending from one end of the semiconductor laser array device, a plurality of second wave guides extending from the other end of the semiconductor laser array device, and coupling wave guides for coupling the second wave guide so that the two first wave guides are confronted. The coupling wave guides have asymmetrically divided connecting points so that the laser beam is prevented from centralizing towards the wave guides located close to the center of the semiconductor laser array.

Abstract: A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, wherein said method further comprises applying a given electric potential to said substrate; applying an electric potential that is different from that of said substrate to an electron-beam irradiator disposed directly above said substrate; and irradiating said irradiator with electron beams from an electron-beam emitting means, whereby said substrate is irradiated with the secondary electron beams generated from said irradiator and/or with the electron beams transmitted through said irradiator.

Abstract: A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

Abstract: A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

Abstract: A semiconductor laser array apparatus comprising a semiconductor laser array device having a plurality of active waveguides in a parallel manner with an optical phase-coupling between the adjacent waveguides and an optical phase-shifting means attaining a 180.degree. phase-shift between the adjacent laser beams emitted from the adjacent waveguides of the laser array device, the phase-shifting means being disposed in the vicinity of one of the facets of the laser array device.

Abstract: A light modulator for modulating data signal to high frequency light signal includes a semiconductor laser diode having an input for receiving the data signal and an output for producing a laser beam, a light detector for receiving the laser beam and producing an electric signal representing the laser beam, and an electric passage between the light detector and the input of the semiconductor laser diode so as to define a positive feedback circuit for feeding the output of the semiconductor laser diode to the input of the same, whereby an oscillation at a resonance frequency is effected in the semiconductor laser diode to generate a light modulated high frequency laser signal from the semiconductor laser diode.

Abstract: A semiconductor laser array device comprising a structure for minimizing the dependence of the longitudinal mode of laser oscillation upon the driving electric current, thereby facilitating laser light oscillation at a high output power with a zero degrees phase shift between adjacent lasing elements.

Abstract: A semiconductor laser array device with a waveguide structure comprising waveguides designed such that the widths thereof gradually increase from the center waveguide to the waveguides positioned at both sides of the array portions.

Abstract: A semiconductor laser array device comprising an active waveguide extending from one light-emitting facet to the other light-emitting facet, wherein said active waveguide is composed of a single main portion extending in the oscillation direction from said one light-emitting facet and constituting a loss waveguide, and a plurality of parallel branching portions extending from the end of said main portion to said other light-emitting facet and constituting a real index waveguide.

Abstract: A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.

Abstract: A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.

Abstract: A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving a light from said semiconductor laser. The compound resonator system is constructed such that a light from the semiconductor laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser, wherein the relationship between the reflectivity R.sub.f at the front facet of the semiconductor laser from which a laser light irradiates the object, and the reflectivity Rr at the rear facet of the semiconductor laser which is opposite the front facet is as follows: 0.1<R.sub.f Rr<1.

Abstract: A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.

Abstract: A semiconductor laser array device with a waveguide structure comprising a first array portion which is composed of a plurality of parallel waveguides; a second array portion which is composed of a plurality of parallel waveguides; a third array portion which is composed of a plurality of symmetrically branching waveguides that optically connect the ends of the parallel waveguides of the first array portion; and a fourth array portion which is composed of a plurality of symmetrically branching waveguides that are optically connected to the other ends of the parallel waveguides of the second array portion, the ends of said symmetrically branching waveguides of the fourth array portion meeting one laser-emitting face of said laser array device at which said symmetrically branching waveguides begin to be optically combined with the adjacent symmetrically branching waveguides.

Abstract: A semiconductor laser device having a buried heterostructure which includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a substrate, said multi-layered crystal structure having a striped mesa-portion, a multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each side of the active layer.

Abstract: A semiconductor laser array device comprising an active layer, a plurality of lasing filaments for laser oscillation, a refractive-index guiding structure constituting said lasing filaments, and a striped electrode structure constituting a current path, the width of which is narrower than the overall width of said lasing filaments.