Patents by Inventor Sadeh Beysen

Sadeh Beysen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic storage element storing data by magnetoresistive effect
    Patent number: 8036024
    Abstract: In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, and a third ferromagnetic layer successively stacked. The first and second ferromagnetic layers, and the second and third ferromagnetic layers are coupled antiparallel to each other, so that it is possible to control the magnetization distribution of the recording layer in an approximately single direction.
    Type: Grant
    Filed: May 30, 2006
    Date of Patent: October 11, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Takashi Takenaga, Takeharu Kuroiwa, Hiroshi Kobayashi, Sadeh Beysen
  • Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the same
    Patent number: 7786725
    Abstract: A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: August 31, 2010
    Assignee: Mitsubishi Electric Corporation
    Inventors: Taisuke Furukawa, Hiroshi Kobayashi, Takashi Takenaga, Takeharu Kuroiwa, Sadeh Beysen, Masakazu Taki
  • Magnetic field detector, and current detection device, position detection device and rotation detection devices using the magnetic field detector
    Patent number: 7508203
    Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.
    Type: Grant
    Filed: April 4, 2008
    Date of Patent: March 24, 2009
    Assignee: Mitsubishi Electric Corporation
    Inventors: Takashi Takenaga, Hiroshi Kobayashi, Takeharu Kuroiwa, Sadeh Beysen, Taisuke Furukawa
  • MAGNETIC FIELD DETECTOR, AND CURRENT DETECTION DEVICE, POSITION DETECTION DEVICE AND ROTATION DETECTION DEVICES USING THE MAGNETIC FIELD DETECTOR
    Publication number: 20080186635
    Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.
    Type: Application
    Filed: April 4, 2008
    Publication date: August 7, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Takashi TAKENAGA, Hiroshi Kobayashi, Takeharu Kuroiwa, Sadeh Beysen, Taisuke Furukawa
  • Magnetic field detector, current detector, position detector and rotation detector employing it
    Patent number: 7375516
    Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: May 20, 2008
    Assignee: Mitsubishi Electric Corporation
    Inventors: Takashi Takenaga, Hiroshi Kobayashi, Takeharu Kuroiwa, Sadeh Beysen, Taisuke Furukawa
  • Magnetic field detector, current detector, position detector and rotation detector employing it
    Publication number: 20070165334
    Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.
    Type: Application
    Filed: September 22, 2004
    Publication date: July 19, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Takashi Takenaga, Hiroshi Kobayashi, Takeharu Kuroiwa, Sadeh Beysen, Taisuke Furukawa
  • Magnetic field detection apparatus and method of adjusting the same
    Publication number: 20070047152
    Abstract: A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.
    Type: Application
    Filed: August 25, 2006
    Publication date: March 1, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Taisuke Furukawa, Hiroshi Kobayashi, Takashi Takenaga, Takeharu Kuroiwa, Sadeh Beysen, Masakazu Taki
  • Magnetic storage element storing data by magnetoresistive effect
    Publication number: 20060267058
    Abstract: In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, and a third ferromagnetic layer successively stacked. The first and second ferromagnetic layers, and the second and third ferromagnetic layers are coupled antiparallel to each other, so that it is possible to control the magnetization distribution of the recording layer in an approximately single direction.
    Type: Application
    Filed: May 30, 2006
    Publication date: November 30, 2006
    Inventors: Takashi Takenaga, Takeharu Kuroiwa, Hiroshi Kobayashi, Sadeh Beysen