Patents by Inventor Sae Hwan Son

Sae Hwan Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organic electronic device
    Patent number: 7821001
    Abstract: An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: October 26, 2010
    Assignee: LG Chem, Ltd.
    Inventors: Minsoo Kang, Sae Hwan Son, Hyeon Choi, Jun Gi Jang, Sang Young Jeon, Yeon Hwan Kim, Seokhee Yoon, Young Kyu Han
  • Organic electronic device
    Publication number: 20080272369
    Abstract: An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.
    Type: Application
    Filed: April 28, 2008
    Publication date: November 6, 2008
    Inventors: Minsoo Kang, Sae Hwan Son, Hyeon Choi, Jun Gi Jang, Sang Young Jeon, Yeon Hwan Kim, Seokhee Yoon, Young Kyu Han
  • Organic electronic device
    Patent number: 7365360
    Abstract: An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: April 29, 2008
    Assignee: LG. Chem, Ltd.
    Inventors: Minsoo Kang, Sae Hwan Son, Hyeon Choi, Jun Gi Jang, Sang Young Jeon, Yeon Hwan Kim, Seokhee Yoon, Young Kyu Han