Patents by Inventor Sae-jin KIM

Sae-jin KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240072283
    Abstract: A fuel cell vehicle includes a cell stack, a DC level converter, an output unit, a first switching unit disposed between a positive output terminal of the DC level converter and a positive input terminal of the output unit, a second switching unit disposed between a negative output terminal of the DC level converter and a negative input terminal of the output unit, a resistor and a third switching unit connected to each other in series between the positive output terminal of the DC level converter and the negative output terminal of the DC level converter, a fourth switching unit disposed between a contact point between the resistor and the third switching unit and the positive input terminal of the output unit, and a controller for controlling switching operation of the first, second, third and fourth switching units according to an operation mode.
    Type: Application
    Filed: July 3, 2023
    Publication date: February 29, 2024
    Applicants: Hyundai Motor Company, KIA CORPORATION
    Inventors: Ki Wook Ohm, Woo Young Lee, Jong Jun Lee, Myung Jin Kim, Sae Kwon Chang, Yoon Tae Kim
  • Publication number: 20220380304
    Abstract: The present invention relates to a method for producing peramivir trihydrate, which is an inhibitor of neuraminidase infection, as an anti-influenza agent. According to the production method of the present invention, peramivir trihydrate can be produced with high yield and stability through a process suitable for producing excellent pharmaceuticals and quality control standards (GMP) without using highly-toxic methanol and activated carbon.
    Type: Application
    Filed: July 2, 2020
    Publication date: December 1, 2022
    Inventors: Hee Un KIM, In Kyu KIM, Myeong Seok LEE, Heung Mo KANG, Sae Jin KIM, In Suk CHOI
  • Patent number: 10217205
    Abstract: Provided are a method and system for analyzing grains using a high-resolution transmission electron microscopy (HRTEM) image. The method relates to analyzing nanometer grains, and includes receiving an HRTEM image, setting local windows each having a predetermined size for the HRTEM image, performing at least one Fast Fourier transformation on pixel data determined by the local windows to calculate local transformation data; and analyzing grains based on the local transformation data.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: February 26, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min Chul Park, Dae Sin Kim, Sat Byul Kim, Sae Jin Kim, Zhiliang Xia, Je Hyun Lee
  • Publication number: 20160267643
    Abstract: Provided are a method and system for analyzing grains using a high-resolution transmission electron microscopy (HRTEM) image. The method relates to analyzing nanometer grains, and includes receiving an HRTEM image, setting local windows each having a predetermined size for the HRTEM image, performing at least one Fast Fourier transformation on pixel data determined by the local windows to calculate local transformation data; and analyzing grains based on the local transformation data.
    Type: Application
    Filed: March 10, 2016
    Publication date: September 15, 2016
    Inventors: MIN CHUL PARK, DAE SIN KIM, SAT BYUL KIM, SAE JIN KIM, ZHILIANG XIA, JE HYUN LEE
  • Patent number: 9257485
    Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-bae Kim, Kyung-min Kim, Sung-ho Kim, Seung-ryul Lee, Man Chang, Eun-ju Cho, Sae-jin Kim, Chang-jung Kim
  • Patent number: 9099639
    Abstract: According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: August 4, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-min Kim, Young-bae Kim, Chang-jung Kim, Sung-ho Kim, Sae-jin Kim, Seung-ryul Lee, Man Chang, Eun-ju Cho
  • Publication number: 20140246643
    Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.
    Type: Application
    Filed: February 27, 2014
    Publication date: September 4, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-bae KIM, Kyung-min KIM, Sung-ho KIM, Seung-ryul LEE, Man CHANG, Eun-ju CHO, Sae-jin KIM, Chang-jung KIM
  • Publication number: 20140042380
    Abstract: According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.
    Type: Application
    Filed: August 8, 2013
    Publication date: February 13, 2014
    Inventors: Kyung-min KIM, Young-bae KIM, Chang-jung KIM, Sung-ho KIM, Sae-jin KIM, Seung-ryul LEE, Man CHANG, Eun-ju CHO