Patents by Inventor Sae Yan CHOI

Sae Yan CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for measuring interference in a memory device
    Patent number: 11404132
    Abstract: A method for measuring interference in a memory device is provided. The method includes: programming a selected memory cell among a plurality of memory cells connected in series between a bit line and a source line; measuring a first noise value of the programmed selected memory cell; programming an adjacent memory cell adjacent to the selected memory cell among the plurality of memory cells; measuring a second noise value of the selected memory cell, after the programming of the adjacent memory cell is completed; and determining interference on the selected memory cell based on the first noise value and the second noise value. The first noise value and the second noise value are measured by detecting a low frequency noise of a cell current of the selected memory cell.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: August 2, 2022
    Assignees: SK hynix Inc., Korea University Research and Business Foundation, Seiong Campus
    Inventors: Jae Woo Lee, Soo Hyun Kim, Dong Hyun Kim, Dong Geun Park, Geun Soo Yang, Jung Chun Kim, Sae Yan Choi
  • METHOD FOR MEASURING INTERFERENCE IN A MEMORY DEVICE
    Publication number: 20220005534
    Abstract: A method for measuring interference in a memory device is provided. The method includes: programming a selected memory cell among a plurality of memory cells connected in series between a bit line and a source line; measuring a first noise value of the programmed selected memory cell; programming an adjacent memory cell adjacent to the selected memory cell among the plurality of memory cells; measuring a second noise value of the selected memory cell, after the programming of the adjacent memory cell is completed; and determining interference on the selected memory cell based on the first noise value and the second noise value. The first noise value and the second noise value are measured by detecting a low frequency noise of a cell current of the selected memory cell.
    Type: Application
    Filed: May 3, 2021
    Publication date: January 6, 2022
    Inventors: Jae Woo LEE, Soo Hyun KIM, Dong Hyun KIM, Dong Geun PARK, Geun Soo YANG, Jung Chun KIM, Sae Yan CHOI