Abstract: Disclosed herein are optical transceivers with multi-laser modules, as well as related optoelectronic assemblies and methods. In some embodiments, an optical transceiver may include: a first laser and a second laser; an optical output path, wherein an output of the first laser is coupled to the optical output path; and switching circuitry to decouple the output of the first laser from the optical output path and to couple an output of the second laser to the optical output path.

Abstract: A multi-wavelength transmitter suitable for use in LiDAR applications where an array of output beams comprising a plurality of wavelengths is spatially modulated with low amplification requirements. The optical transmitter comprises one or more light sources, such as a plurality of laser emitters operable at different wavelengths. The light source(s) are coupled, for example through one or more planar waveguides, to an optical switch network comprising one or more switches. The switch network is to route, in a time divided manner, source beams to individual ones of a plurality of switch output ports thereby modulating the wavelength of a beam exiting each of the output ports. A plurality of output couplers, for example comprising edge coupled spot size convertors, are coupled to separate ones of the switch output ports, for example through one or more planar waveguides and/or one or more beam splitters.

Abstract: In one embodiment, a silicon photonic integrated circuit (PIC) includes a pair of Mach-Zehnder Interferometers (MZI) with a phase shifter to function as a 1x2 optical switches. On one path between the MZIs is a wavelength interleaver. The MZI switch can be controlled to either an all-pass mode or a by-pass mode, therefore setting configurable optical demultiplexing bandwidths to support dual 1.6 T FR8/800G FR4 network backward compatibility. The configurable multiplexer operates at set-and-forget mode for the entire operating temperature and the product’s lifetime.

Abstract: Embodiments herein relate to an apparatus for use in a hybrid laser. The apparatus may include a silicon substrate and a waveguide to facilitate transmission of an optical signal in a first direction that is orthogonal to a surface of the silicon substrate. The apparatus may further include a metal shunt that is less than or equal to 10 micrometers from the waveguide in a second direction that is orthogonal to the surface of the silicon substrate and orthogonal to the first direction. Other embodiments may be described and/or claimed.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to thermal routing techniques within a hybrid silicon laser or photonics integrated circuit to facilitate heat extraction during laser operation. In particular dual metal layers, with a top metal layer thermally coupled with P node above a quantum well and extending substantially under a heat sink, and a bottom metal layer thermally coupled with an N node, where the top metal layer and the bottom metal layer are not electrically coupled. Other embodiments may be described and/or claimed.

Abstract: Disclosed herein are optical transceivers with multi-laser modules, as well as related optoelectronic assemblies and methods. In some embodiments, an optical transceiver may include: a first laser and a second laser; an optical output path, wherein an output of the first laser is coupled to the optical output path; and switching circuitry to decouple the output of the first laser from the optical output path and to couple an output of the second laser to the optical output path.

Abstract: A method may include: forming a base layer on a substrate; forming a waveguide assembly on the base layer, where the waveguide assembly is surrounded by a cladding layer; forming a trench opening through the cladding layer and the base layer; forming an undercut void by etching the substrate through the trench opening, where the undercut void extends under the waveguide assembly and the base layer; and filling the trench opening with a filler to seal off the undercut void. Other embodiments are described and claimed.

Abstract: Conventional integrated optical amplifiers, which combine different types of platforms, e.g. silicon photonic integrated circuit for the device layer, and a Group III-V material for the gain medium, typically include a curved waveguide extending through the gain medium coupled to waveguides in the main device layer. Unfortunately, the radius of curvature of the curved waveguide becomes a limiting factor for both size and amplification. Accordingly, an optical amplifier which eliminates the need for the curved waveguide by including a coupler for splitting an input optical signal into two sub-beams, for passage through the gain medium, and a reflector, such as a U-turn, for reflecting or redirecting the two sub-beams back through the gain medium to the coupler for recombination, would be a welcome improvement. A phase tuner may also be provided to ensure coherence cancellation between the two sub-beams to maximize output and minimize back reflection without requiring an isolator.

Abstract: Embodiments disclosed herein include electronic packages for optical to electrical switching. In an embodiment, an electronic package comprises a first package substrate and a second package substrate attached to the first package substrate. In an embodiment, a die is attached to the second package substrate. In an embodiment, a plurality of photonic engines are attached to a first surface and a second surface of the first package substrate. In an embodiment, the plurality of photonic engines are communicatively coupled to the die through the first package substrate and the second package substrate.

Abstract: The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.

Abstract: The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.

Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

Abstract: Disclosed herein are optical transceivers with multi-laser modules, as well as related optoelectronic assemblies and methods. In some embodiments, an optical transceiver may include: a first laser and a second laser; an optical output path, wherein an output of the first laser is coupled to the optical output path; and switching circuitry to decouple the output of the first laser from the optical output path and to couple an output of the second laser to the optical output path.

Abstract: An on-chip optical filter including three different arm sections comprised of three different types of waveguides, e.g. shape, material or polarization, can achieve the same performance quality as external commercially available solutions with no addition costs of fabrication of the photonic integrated chip (PIC) and a footprint several orders of magnitude smaller than any of the conventional filters.

Abstract: Conventional hybrid photonic integrated circuits (PIC) combine one type of semiconductor platform for the main PIC, and a different type of semiconductor platform for a secondary chip. Conventional mounting processes include forming a recess in the main PIC, and mating electrical connectors from the secondary chip and the main PIC within the recess. Mating the first and second electrical connectors in the recess increases the complexity of forming the main PIC, and hampers heat dissipation from secondary chip through oxide layers in the main PIC. Providing a conductive, e.g. redistribution, layer from the first electrode along the bottom and sides of the recess eliminates the complexity in forming the main PIC, and enables the first electrical connector to be mounted directly onto a more thermally conductive substrate material.

Abstract: Conventionally, wavelength locking and monitoring has been achieved used various components, including calibrated etalon filters, gratings, and arrays of color filters, which offer fairly bulky solutions that require complicated controls. An improved on-chip wavelength monitor comprises: a combination comb filter comprising a plurality of comb filters, each for receiving a test beams, and each comb filter including a substantially different FSR, e.g. 10× to 20× the next closest FSR. A controller dithers a phase tuning section of each comb filter to generate a maximum or minimum output in a corresponding photodetector indicative of the wavelength of the test signal.

Abstract: Conventional hybrid photonic integrated circuits (PIC) combine one type of semiconductor platform for the main PIC, and a different type of semiconductor platform for a secondary chip. Conventional mounting processes include forming a recess in the main PIC, and mating electrical connectors from the secondary chip and the main PIC within the recess. Mating the first and second electrical connectors in the recess increases the complexity of forming the main PIC, and hampers heat dissipation from secondary chip through oxide layers in the main PIC. Providing a conductive, e.g. redistribution, layer from the first electrode along the bottom and sides of the recess eliminates the complexity in forming the main PIC, and enables the first electrical connector to be mounted directly onto a more thermally conductive substrate material.

Abstract: Practical silicon-based light sources are still missing, despite the progress in germanium lasers, because both silicon and germanium are indirect-band semiconductors and inefficient at light generation. A tunable and single mode external cavity laser comprising: a gain medium for generating light between a reflective surface at one end of the gain medium; and a wavelength selective reflector at the other end of a laser cavity. A splitter disposed in the laser cavity includes an input port optically coupled to the gain medium, an input/output port optically coupled to the wavelength selective reflector, and an output port for outputting laser light at selected wavelengths. The wavelength selective reflector reflects light of one or more selected periodic wavelengths back to the gain medium via the input/output port, and passes light of non-selected wavelengths out of the laser cavity.

Abstract: Conventionally, wavelength locking and monitoring has been achieved used various components, including calibrated etalon filters, gratings, and arrays of color filters, which offer fairly bulky solutions that require complicated controls. An improved on-chip wavelength monitor comprises: a combination comb filter comprising a plurality of comb filters, each for receiving a test beams, and each comb filter including a substantially different FSR, e.g. 10× to 20× the next closest FSR. A controller dithers a phase tuning section of each comb filter to generate a maximum or minimum output in a corresponding photodetector indicative of the wavelength of the test signal.

Abstract: Higher power tunable lasers are feasible using photonics integrated circuit based external cavity laser configurations by using multiple RSOAs inside a single cavity to provide multiple on-chip coherent optical output at the same wavelength. The total collective output power in various output branches potentially adds up being higher than what commercial lasers can provide. Using multiple RSOA increases and distributes the number of gain materials, which keeps them in a linear regime and avoids available gain saturation, which thereby removes gain saturation limitation in optical amplifications.