Abstract: A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150° C. for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 1018 to 1023 cm?3 and in the barrier layers is 1013 to 1018 cm?3.

Abstract: A thermoelectric module comprised of a quantum well thermoelectric material with low thermal conductivity and low electrical resitivity (high conductivity) for producing n-legs and p-legs for thermoelectric modules. These qualities are achieved by fabricating crystalline quantum well super-lattice layers on a substrate material having very low thermal conductivity. Prior to depositing the super-lattice thermoelectric layers the low thermal conductivity substrate is coated with a thin layer of crystalline semi-conductor material, preferably silicon. This greatly improves the thermoelectric quality of the super-lattice quantum well layers. In preferred embodiments the super-lattice layers are about 4 nm to 20 nm thick. In preferred embodiments about 100 to 1000 of these super-lattice layers are deposited on each substrate layer, to provide films of super-lattice layers with thicknesses of in the range of about 0.4 microns to about 20 microns on much thicker substrates.

Abstract: Quantum well thermoelectric modules and a low-cost method of mass producing the modules. The devices are comprised of n-legs and p-legs, each leg being comprised of layers of quantum well material in the form of very thin alternating layers. In the n-legs the alternating layers are layers of n-type semiconductor material and electrical insulating material. In the p-legs the alternating layers are layers of p-type semiconductor material and electrical insulating material. Both n-legs and p-legs are comprised of materials providing similar thermal expansion. In preferred embodiments the layers, referred to as super-lattice layers are about 4 nm to 20 nm thick. The layers of quantum well material is separated by much larger layers of thermal and electrical insulating material such that the volume of insulating material in each leg is at least 20 times larger than the volume of quantum well material.

Abstract: Quantum well thermoelectric modules and a low-cost method of mass producing the modules. The devices are comprised of n-legs and p-legs, each leg being comprised of layers of quantum well material in the form of very thin alternating layers. In the n-legs the alternating layers are layers of n-type semiconductor material and electrical insulating material. In the p-legs the alternating layers are layers of p-type semiconductor material and electrical insulating material. In preferred embodiments the layers, referred to as superlattice layers are about 4 nm to 20 nm thick. The layers of quantum well material is separated by much larger layers of thermal and electrical insulating material such that the volume of insulating material in each leg is at least 20 times larger than the volume of quantum well material.

Abstract: A miniature quantum well thermoelectric device. The device includes a number of quantum well n-legs and a number of quantum well p-legs. Each of the p-legs are alternately electrically connected in series with each of the n-legs at locations that are thermal communication with a cold side and a hot side. The device can be adapted to function as a cooler and it can be adapted to function as an electric power generator. In a preferred embodiment the p-legs and said n-legs are configured generally radially between the hot side and the cold side. In this preferred embodiments each of the n-legs has at least 600 n-type layers with each n-type layer separated from other n-type layers by an insulating layer and each of the p-legs has at least 600 p-type layers with each p-type layer separated from other p-type layers by an insulating layer.

Abstract: A quantum well thermoelectric module providing very high conversion of heat energy in to electrical energy. In prefered embodiments the module provides electric power for monitoring, measuring or detecting any of a variety of things (such as temperature, smoke, other pollution, flow, fluid level and vibration) and a transmitter for transmitting information measured or detected. In a preferred embodiment wireless monitor systems are utilized to monitor conditions at various locations aboard a ship and to wirelessly transmit information about those conditions to a central location. Preferably, a finned unit is provided to efficiently transfer heat from a module surface to the environment. A preferred quantum well choice is p type B9C/B4C and n-type Si/SiGe legs. Another preferred choice is n-doped Si/SiGe for the n-legs and p-doped Si/SiGe for the p-legs.

Abstract: A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.

Abstract: A quantum well thermoelectric module providing very high conversion of heat energy in to electrical energy. In prefered embodiments the module provides electric power for monitoring, measuring or detecting any of a variety of things (such as temperature, smoke, other pollution, flow, fluid level and vibration) and a transmitter for transmitting information measured or detected. In a preferred embodiment wireless monitor systems are utilized to monitor conditions at various locations aboard a ship and to wirelessly transmit information about those conditions to a central location. Preferably, a finned unit is provided to efficiently transfer heat from a module surface to the environment. A preferred quantum well choice is p type B9C/B4C and n-type Si/SiGe legs. Another preferred choice is n-doped Si/SiGe for the n-legs and p-doped Si/SiGe for the p-legs.

Abstract: A super-lattice thermoelectric device. The device includes p-legs and n-legs, each leg having a large number of alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon germanium. The p-legs includes alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Applicants have fabricated and tested a first Si/SiGe (n-leg) and B4C/B9C (p-leg) quantum well thermocouple. Each leg was only 11 microns thick on a 5 micron Si substrate. Nevertheless, in actual tests the thermocouple operated with an amazing efficiency of 14 percent with a Th of 250 degrees C. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.

Abstract: A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon germanium. The p-legs are comprised of alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Applicants have fabricated and tested a first Si/SiGe (n-leg) and B4C/B9C (p-leg) quantum well thermocouple. Each leg was only 11 microns thick on a 5 micron Si substrate. Nevertheless, in actual tests operated the couple operated with an amazing efficiency of 14 percent with a Th of 250 degrees C. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.

Abstract: A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.

Abstract: Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin organic substrate. The layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible.

Abstract: Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin flexible substrate. The layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton.RTM.) coated with an even thinner film of crystalline silicon. The substrate is about 0.3 mills (127 microns) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton.RTM.

Abstract: A composition having an empirical formula MB.sub.2-z +N, wherein 0<z<0.10 and M is selected from the group consisting of Zr, Hf and Ti, wherein N is selected from a group consisting of Cu, Au and Ag and wherein the MB.sub.2-z defines a ceramic matrix structure defining a volume with void spaces comprising at least 10 percent of the volume of the matrix structure and the N occupies at least 70 percent, by volume, of the void spaces. A preferred method of making the composition is a two step process: First, ZrB.sub.2 powder (which preferably is slightly enriched in Zr is vacuum hot pressed at a hot pressing temperature of about 2150 degrees C. to create a ceramic matrix having a density of about 68 percent. Second, the ceramic matrix is heated in a pool of copper at a vacuum and at an infiltration temperature of about 1700 degrees C. to permit copper from the pool to infiltrate the ceramic matrix.

Abstract: A thermoelectric element having a very large number of alternating layers of semiconductor material. The alternating layers all have the same crystalline structure. The inventors have demonstrated that materials produced in accordance with this invention provide figures of merit more than six times that of prior art thermoelectric materials. A preferred embodiment is a superlattice of Si, as a barrier material, and SiGe, as a conducting material, both of which have the same cubic structure. Another preferred embodiment is a superlattice of B--C alloys, the layers of which would be different stoichiometric forms of B--C but in all cases the crystalline structure would be alpha 0. In a preferred embodiment the layers are grown under conditions as to cause them to be strained at their operating temperature range in order to improve the thermoelectric properties.

Abstract: A multi-layer superlattice quantum well thermoelectric material using materials for the layers having the same crystalline structure. A preferred embodiment is a superlattice of Si and SiGe, both of which have a cubic structure. Another preferred embodiment is a superlattice of B-C alloys, the layers of which would be different stoichometric forms of B-C but in all cases the crystalline structure would be alpha rhombohedral.