Abstract: Various aspects include methods compensating for Compton scattering effects in pixel radiation detectors. Various aspects may include determining whether gamma ray detection events occurred in two or more detector pixels within an event frame, determining whether the gamma ray detection events occurred in detector pixels within a threshold distance of each other in response to determining that gamma ray detection events occurred in two or more detector pixels within the event frame, and recording the two or more gamma ray detection events as a single gamma ray detection event having an energy equal to the sum of measured energies of the two or more gamma ray detection events located in a detector pixel having a highest measured energy in response to determining that the gamma ray detection events occurred in detector pixels within the threshold distance of each other.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: Various aspects include methods of compensating for issues caused by charge sharing between pixels in pixel radiation detectors. Various aspects may include measuring radiation energy spectra with circuitry capable of registering detection events occurring simultaneous or coincident in two or more pixels, adjusting energy measurements of simultaneous-multi-pixel detection events by a charge sharing correction factor, and determining a corrected energy spectrum by adding the adjusted energy measurements of simultaneous-multi-pixel detection events to energy spectra of detection events occurring in single pixels. Adjusting energy measurements of simultaneous-multi-pixel detection events may include multiplying measured energies of simultaneous-multi-pixel detection events by a factor of one plus the charge sharing correction factor.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: Various aspects include methods of compensating for issues caused by charge sharing between pixels in pixel radiation detectors. Various aspects may include measuring radiation energy spectra with circuitry capable of registering detection events occurring simultaneous or coincident in two or more pixels, adjusting energy measurements of simultaneous-multi-pixel detection events by a charge sharing correction factor, and determining a corrected energy spectrum by adding the adjusted energy measurements of simultaneous-multi-pixel detection events to energy spectra of detection events occurring in single pixels. Adjusting energy measurements of simultaneous-multi-pixel detection events may include multiplying measured energies of simultaneous-multi-pixel detection events by a factor of one plus the charge sharing correction factor.

Abstract: Various aspects include methods compensating for Compton scattering effects in pixel radiation detectors. Various aspects may include determining whether gamma ray detection events occurred in two or more detector pixels within an event frame, determining whether the detection events occurred in detector pixels within a threshold distance of each other in response to determining that detection events occurred in two or more detector pixels within the event frame, and recording the two or more detection events as a single detection event having an energy equal to the sum of the measured energies of the two or more detection events located in the detector pixel having a highest measured energy in response to determining that the detection events occurred in detector pixels within the threshold distance of each other.

Abstract: Various embodiments include a structure that is configured to emit infrared (IR) light when exposed to ionizing radiation, such as X ray and gamma radiation, and to be positioned adjacent to a radiation detector so that infrared light illuminates the radiation detector when the structure and detector are exposed to the ionizing radiation. The structure may include a layer that is opaque to ultraviolet (UV) and visible light, another layer that is opaque to UV and visible light, and an intermediate layer that is configured to emit IR light when exposed to ionizing radiation. The intermediate layer may be a single layer. The intermediate layer may be two layers including a layer configured to emit UV or visible light when exposed to ionizing radiation and a layer configured to emit IR light when exposed to UV or visible light.

Abstract: Various embodiments include an imaging system and methods of operating the system to reduce effects from space charge formation in radiation detectors. The imaging system includes a radiation detector configured to detect photon energy from ionizing radiation, a source of ionizing radiation configured to emit a beam of radiation toward the radiation detector, and a chopper disposed between the radiation detector and the source of ionizing radiation, wherein the chopper is configured to periodically block the beam of radiation from reaching the radiation detector. The chopper may be configured to limit delivery of photon energy to the radiation detector to durations shorter than an onset time of dynamic polarization and E-field relaxation. In some embodiments, the chopper is a rotating chopper rotated by a drive motor. In some embodiments, the chopper is a shutter.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.