Abstract: Disclosed are a wafer etching system and a wafer etching process using same that enable thin wafers to be smoothly manufactured and transferred. The present invention includes: a wafer grinding device for mechanically etching wafers; an aligner for aligning etched wafers from the wafer grinding unit; a dry etching device for etching the wafers once more that are aligned by the aligner; a wafer transfer device for transferring the wafers between the aligner and the dry etching device; and a tape mounter for performing taping on the wafers that have completed etching from the dry etching device.

Abstract: A wafer etching apparatus and a wafer etching method using the wafer etching apparatus, which are capable of etching Si wafer in a dry etching method, are disclosed. According to the wafer etching apparatus and the wafer etching method, the capacitively coupled plasma unit or the inductively coupled plasma unit and the remote plasma unit are included together to etch wafer in a high speed and to reduce etching operation time. Additionally, the chuck has an upper surface with roughness so that the wafer can be cooled down through a helium gas provided to the wafer through a minute space between the upper surface and the wafer. Therefore, unwanted plasma which is generated in the groove in the conventional wafer etching apparatus is prevented to prevent damage of the wafer.