Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.

Abstract: A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.

Abstract: A photoresist composition and method of forming pattern using the same are provided. The photoresist composition contains an alkali-soluble novolac resin, a photosensitizer including a compound of Chemical Formula 1, and a solvent.

Abstract: A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.

Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.

Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.

Abstract: A photoresist composition includes a novolac resin, a benzophenone photosensitizer and an ethylidyne tris phenol photosensitizer, and an organic solvent. Thus, a micropattern having a higher resolution than the resolution of an exposure apparatus is formed to decrease an amount of exposure and/or exposure time, thereby improving manufacturing reliability and productivity.

Abstract: The present invention relates to a photoresist composition that comprises a resin that is represented by Formula 1, a method for forming a thin film pattern, and a method for manufacturing a thin film transistor array panel by using the same. Herein, R is a methylene group, and n is an integer of 1 or more.

Abstract: A photoresist composition includes 5% to 50% by weight of an alkali-soluble resin, 0.5% to 30% by weight of a quinone diazide compound, 0.1% to 15 % by weight of a curing agent, and a remainder of an organic solvent. A method of forming a metal pattern includes coating a photoresist composition on a base substrate having a metal layer, and forming a first photoresist film. The photoresist composition includes 5% to 50% by weight of an alkali-soluble resin, 0.5% to 30% by weight of a quinone diazide compound, 0.1% to 15% by weight of a curing agent, and a remainder of an organic solvent. The first photoresist film is patterned, and forms a first photo pattern. The base substrate having the first photo pattern is heated, and forms a first baked pattern. The metal layer is patterned using the first baked pattern, and forms a metal pattern.

Abstract: A photoresist resin composition, a method for forming a pattern and a method for manufacturing a display panel using the photoresist resin composition are disclosed. The photoresist resin composition includes an alkali soluble resin, a photoresist compound, and a solvent, wherein the alkali soluble resin includes a first polymer resin represented by the following Chemical Formula 1, wherein, of R1, R2, R3, R4, R5 and R6, at least one is a hydroxyl group, at least two are methyl groups and any remaining groups are hydrogen, and of R7, R8, R9, R10 and R11, at least one is a hydroxyl group, at least two are methyl groups and any remaining groups are hydrogen.

Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.

Abstract: The present invention relates to a composition for cleaning a photoresist and is to provide a cleaning composition wherein the residue of the photoresist does not remain on the boundary surface between the cleaned area and the not-cleaned area after a negative photoresist containing pigment is cleaned, soft-baked, exposed and developed. The present invention provides a composition for cleaning a positive or negative photoresist which comprises (a) from 0.1 to 20 wt. % of and alkyl oxide polymer with a molecular weight of from 50 to 2000 and (b) from 80 to 99.9 wt. % of an organic solvent comprising: (b?1) from 1 to 20 parts by weight of dipropylene glycol methyl ether (DPGME), from 10 to 50 parts by weight of N-methyl pyrolidone (NMP) and from 50 to 90 parts by weight of methyl isobutyl ketone (MIBK), or (b?2) from 10 to 90 parts by weight of dimethyl formaldehyde (DMF) or dimethylacetamide (DMAc) and from 10 to 50 parts by weight of n-butyl acetate.

Abstract: The present invention relates to a composition for cleaning a photoresist and is to provide a cleaning composition wherein the residue of the photoresist does not remain on the boundary surface between the cleaned area and the not-cleaned area after a negative photoresist containing pigment is cleaned, soft-baked, exposed and developed. The present invention provides a composition for cleaning a positive or negative photoresist which comprises (a) from 0.1 to 20 wt. % of and alkyl oxide polymer with a molecular weight of from 50 to 2000 and (b) from 80 to 99.9 wt. % of an organic solvent comprising: (b?1) from 1 to 20 parts by weight of dipropylene glycol methyl ether (DPGME), from 10 to 50 parts by weight of N-methyl pyrolidone (NMP) and from 50 to 90 parts by weight of methyl isobutyl ketone (MIBK), or (b?2) from 10 to 90 parts by weight of dimethyl formaldehyde (DMF) or dimethylacetamide (DMAc) and from 10 to 50 parts by weight of n-butyl acetate.

Abstract: A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.

Abstract: A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.