Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space therein, a support unit that supports the substrate in the treatment space, a gas supply unit that supplies a process gas into the treatment space, an RF power supply that supplies an RF signal to excite the process gas into plasma, and a matching circuit connected between the RF power supply and the process chamber. The matching circuit includes an impedance matching device that performs impedance matching and a harmonic removal device that removes harmonics caused by the RF power supply. The matching circuit operates in a first mode when the harmonics caused by the RF power supply are sensed and in a second mode when the harmonics caused by the RF power supply are not sensed.

Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space therein, a support unit that supports the substrate in the treatment space, a gas supply unit that supplies a process gas into the treatment space, an RF power supply that supplies an RF signal to excite the process gas into plasma, and a matching circuit connected between the RF power supply and the process chamber. The matching circuit includes an impedance matching device that performs impedance matching and a harmonic removal device that removes harmonics caused by the RF power supply. The matching circuit operates in a first mode when the harmonics caused by the RF power supply are sensed and in a second mode when the harmonics caused by the RF power supply are not sensed.

Abstract: The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more.

Abstract: The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate, a gas supply unit configured to supply a gas into the treatment space, and a plasma source configured to generate plasma, wherein the support unit includes a support plate, on which the substrate is positioned, a ring assembly surrounding a circumference of the support plate and having a ring-shaped electrode, and a voltage applying unit configured to control an incident angle of the plasma onto the substrate by applying a voltage to the ring-shaped electrode, and wherein the voltage applying unit includes a base plate of a conductive material, a DC power source configured to apply a DC voltage to the base plate, and a plurality of connecting bodies connecting the base plate and the ring-shaped electrode, formed of a conductive material.

Abstract: The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more.