Abstract: Aspects of a storage device including a memory and a controller are provided which allow sub-blocks with different sub-block addresses to be linked across multiple planes to form metablocks. The memory includes multiple blocks in different planes, where each of the blocks includes multiple sub-blocks. The controller links a first sub-block in a first plane and a second sub-block in a second plane with different sub-block addresses to form the metablock. After forming the metablock, the controller programs different word lines in the first and second sub-blocks when writing data to the metablock. Thus, the controller may write data to linked or relinked metablocks with different sub-block addresses, thereby improving die yield and memory capacity of the storage device.

Abstract: Aspects of a storage device including a memory and a controller are provided which allow sub-blocks with different sub-block addresses to be linked across multiple planes to form metablocks. The memory includes multiple blocks in different planes, where each of the blocks includes multiple sub-blocks. The controller links a first sub-block in a first plane and a second sub-block in a second plane with different sub-block addresses to form the metablock. After forming the metablock, the controller programs different word lines in the first and second sub-blocks when writing data to the metablock. Thus, the controller may write data to linked or relinked metablocks with different sub-block addresses, thereby improving die yield and memory capacity of the storage device.