Abstract: A method for applying an extremely thin layer of an adherent material to a substrate at a controllable rate. The disclosed embodiment provides a method for depositing a thin layer of titanium, typically much less than 100 Angstroms, on a silicon dioxide substrate layer in order to provide the necessary adhesion for a metallic film. A silicon wafer having a layer of silicon dioxide is placed on a titanium precoated carrier in an evacuated chamber. The wafer and carrier are then sputter etched using argon as a sputter etchant while titanium is deposited onto the wafer. The ratio of deposition rate to etching rate is controlled to provide a very low effective deposition rate. Thus, while the surface is being atomically cleaned, the adhesive layer is simultaneously deposited. A film of a noble metal, typically platinum, may then be deposited onto the adhesive layer. In an alternative embodiment, the titanium is sputter deposited from a target while the substrate is simultaneously sputter etched.