Patents by Inventor Sahana Kenchappa

Sahana Kenchappa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bulk acoustic wave filter with reduced nonlinear signal distortion
    Patent number: 7535323
    Abstract: A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.
    Type: Grant
    Filed: July 10, 2006
    Date of Patent: May 19, 2009
    Assignee: Skyworks Solutions, Inc.
    Inventors: Bradley Barber, Sahana Kenchappa, Russ Reisner
  • Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same
    Publication number: 20080241365
    Abstract: According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.
    Type: Application
    Filed: April 22, 2008
    Publication date: October 2, 2008
    Inventors: Bradley Barber, Paul P. Gehlert, Sahana Kenchappa, Christopher F. Shepard
  • Acoustic mirror for a bulk acoustic wave structure
    Publication number: 20080211352
    Abstract: According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.
    Type: Application
    Filed: May 9, 2008
    Publication date: September 4, 2008
    Inventors: Bradley Barber, Paul P. Gehlert, Sahana Kenchappa, Christopher F. Shepard
  • Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same
    Patent number: 7414350
    Abstract: According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.
    Type: Grant
    Filed: March 3, 2006
    Date of Patent: August 19, 2008
    Assignee: Skyworks Solutions, Inc.
    Inventors: Bradley Barber, Paul P. Gehlert, Sahana Kenchappa, Christopher F. Shepard
  • Bulk acoustic wave filter with reduced nonlinear signal distortion
    Publication number: 20080007369
    Abstract: A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.
    Type: Application
    Filed: July 10, 2006
    Publication date: January 10, 2008
    Inventors: Bradley Barber, Sahana Kenchappa, Russ Reisner