Abstract: A piezoelectric material composition may be represented by Equation 1. A piezoelectric device may include a piezoelectric device layer including the piezoelectric material composition represented by Equation 1, a first electrode disposed at a first surface of the piezoelectric device layer, and a second electrode disposed at a second surface different from the first surface of the piezoelectric device layer. a ? PbZrO 3 - b ? PbTiO 3 - ( 1 - a - b ) ? Pb ( Ni c ? Nb 1 - c ) ? O 3 + x ? mol ? % ? A + y ? vol ? % ? BaTiO 3 [ Equation ? 1 ] where A is Fe2O3, Co2O3, Mn2O3, ZnO, GeO2, CuO, or NiO, and 0.15?a?0.24, 0.29?b?0.38, 0.30?c?0.35, 0.00?x?3.00, and 0.00?y?7.00.

Abstract: A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where (1?x)(LizNa0.5-zK0.5)(Nb1-ySby)O3·xCaZrO3??[Formula 1] where x, y, and z have a range of 0.001?x?0.2, a range of 0?y?0.5, and a range of 0?z?0.2, respectively.

Abstract: A piezoelectric material composition may be represented by Equation 1, 0 . 9 ? 6 ? ( Na a ? K 1 - a ) ? ( Nb b ( T 1 - b ) ) ? O 3 - ( 0.04 - x ) ? M A ? M B ? O 3 - x ? ( Bi c ? Ag 1 - c ) ? M B ? O 3 + d ? mol ? % ? A [ Equation ? 1 ] where T is Sb, Ta, or V, MA is Sr, Ba, or Ca, MB is Zr, Hf, Ti, or Sn, and A is Fe2O3, Co2O3, Mn2O3, ZnO, GeO2, CuO, or NiO, and 0.40?a?0.60, 0.90?b?1.00, 0.30?c?0.70, 0.00?x?0.04, and 0.00<d?1.00.

Abstract: A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where (1?x)(LizNa0.5-zK0.5)(Nb1-ySby)O3·xCaZrO3 ??[Formula 1] where x, y, and z have a range of 0.001?x?0.2, a range of 0?y?0.5, and a range of 0?z?0.2, respectively.

Abstract: A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where (1?x)(LizNa0.5-zK0.5)(Nb1-ySby)O3·xCaZrO3??[Formula 1] where x, y, and z have a range of 0.001?x?0.2, a range of 0?y?0.5, and a range of 0?z?0.2, respectively.

Abstract: A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(NaaK1-a)(Nbb(T1-b))O3-(0.04-x)MZrO3-x(BicAg1-c)ZrO3+d mol % NaNbO3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4?a?0.6, b is 0.90?b?0.98, c is 0.4?c?0.6, d is 0?d?5.0, and x is 0?x?0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

Abstract: A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where (1?x)(LizNa0.5-zK0.5)(Nb1-ySby)O3·xCaZrO3??[Formula 1] where x, y, and z have a range of 0.001?x?0.2, a range of 0?y?0.5, and a range of 0?z?0.2, respectively.

Abstract: A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where (1-x)(LizNa0.5-zK0.5)(Nb1-ySby)O3.xCaZrO3??[Formula 1] where x, y, and z have a range of 0.001?x?0.2, a range of 0?y?0.5, and a range of 0?z?0.2, respectively.

Abstract: Compositions are disclosed that comprise a piezoelectric material according to Chemical Formula 1: (1?y)(NaaK1-a)(Nb1-x,Sbx)-ySrZrO3+n mol % CuO, wherein 0.01?y?0.10, 0.4?a?0.6, 0?x?0.06, and 0.5?n?1.5. The compositions can further comprise a first material, and a second material surrounded by the first material. A piezoelectric device is also described, which includes a piezoelectric device layer including a composition of Chemical Formula 1, and having a first material layer and a second material layer surrounded by the first material layer; a first electrode part disposed on a first surface of the piezoelectric device layer; and a second electrode part disposed on a second surface facing the first surface.

Abstract: Disclosed are a method of manufacturing a piezoelectric thin film and a piezoelectric sensor manufactured using the piezoelectric thin film. A piezoelectric sensor according to an embodiment of the present disclosure includes a substrate; a lower electrode formed on the substrate; a two-dimensional perovskite nanosheet seed layer formed on the lower electrode; a ceramic piezoelectric thin film formed on the two-dimensional perovskite nanosheet seed layer; and an upper electrode formed on the ceramic piezoelectric thin film, wherein each of the two-dimensional perovskite nanosheet seed layer and the ceramic piezoelectric thin film has a crystal structure.

Abstract: A piezoelectric element comprising a compound represented by Formula 1, a piezoelectric device including the piezoelectric element, a vibration module including the piezoelectric device, and a display apparatus including the piezoelectric device are provided, where (1-x)(LizNa0.5-zK0.5)(Nb1-ySby)O3.xCaZrO3??[Formula 1] where x, y, and z have a range of 0.001?x?0.2, a range of 0?y?0.5, and a range of 0?z?0.2, respectively.

Abstract: Disclosed are a method of manufacturing a piezoelectric thin film and a piezoelectric sensor manufactured using the piezoelectric thin film. A piezoelectric sensor according to an embodiment of the present disclosure includes a substrate; a lower electrode formed on the substrate; a two-dimensional perovskite nanosheet seed layer formed on the lower electrode; a ceramic piezoelectric thin film formed on the two-dimensional perovskite nanosheet seed layer; and an upper electrode formed on the ceramic piezoelectric thin film, wherein each of the two-dimensional perovskite nanosheet seed layer and the ceramic piezoelectric thin film has a crystal structure.

Abstract: The present invention relates to a ceramic composition for a piezoelectric actuator and a piezoelectric actuator comprising the same. The ceramic composition for piezoelectric actuator includes a piezoelectric ceramic powder expressed by a Chemical Formula: (1-x)Pb(Zr(1-y)Tiy)O3-xPb(Ni1/3Nb2/3)O3, wherein x is 0.25 to 0.4 and y is 0.4 to 0.7; and a CuO powder and a PbO powder forming a liquid-phase compound at a sintering temperature or less of the piezoelectric ceramic powder. The ceramic composition for a piezoelectric actuator according to the present invention exhibits excellent piezoelectric characteristics and allows for low-temperature firing.

Abstract: The present invention discloses a dielectric ceramic composition having a formula represented by (1−x)Nd(Ga1−yAly)O3-xCaTiO3, wherein x refers a mole fraction of CaTiO3 to the composition and satisfies an expression of 0.5≦x≦0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0≦y≦0.9. The present dielectric substance has a high dielectric constant and a high Q value and a resonant frequency temperature coefficient of near 0. Also, it can be sintered at a low temperature and thus replace the conventional dielectric materials used as a filter for parts of mobile communication or satellite communication appliances.

Abstract: The present invention discloses a method for preparing Ba(Zn1/3Ta2/3)O3 dielectric ceramic compositions. In accordance with the present invention, by adding a small amount of Al2O3, Ga2O3, ZrO2, or TiO2, which can generate metal ion having an atomic value of 3+ or 4+, the problems occurring during the sintering of BZT due to the volatilization of Zn can be solved. Also, the BZT dielectrics obtained from the present method have a Q value of 200,000, which is higher than the pure BZT, a dielectric constant of 28.5 or more and a resonant frequency temperature coefficient of near 0.

Abstract: The present invention discloses a dielectric ceramic composition having a formula represented by (1−x)Nd(Ga1−yAly)O3−xCaTiO3, wherein x refers a mole fraction of CaTiO3 to the composition and satisfies an expression of 0.5≦x≦0.8, and y refers a mole fraction of Al to Ga and satisfies an expression of 0≦y≦0.9.

Abstract: The present invention discloses a method for preparing Ba(Zn⅓Ta⅔)O3 dielectric ceramic compositions.