Abstract: Disclosed are an electronic device, and a method for controlling same. Particularly, the present disclosure relates to an electronic device, and a method for controlling same, which can secure high visibility of a subject by acquiring, from an original image, a plurality of sub images having a smaller bit number than the original image, and acquiring a synthesized image on the basis of information about the shapes of objects included in the plurality of sub images.

Abstract: Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

Abstract: Provided is a method of depositing a thin film.

Abstract: Provided is a method of depositing a thin film on a substrate using an impulse feeding process. The method includes performing a second reaction gas continuous feeding process of continuously feeding a second reaction gas into a chamber in which the substrate is installed, and performing a number of times, during the second reaction gas continuous feeding process, a process cycle including a first reaction gas feeding process of feeding a first reaction gas into the chamber and a first reaction gas purge process of purging the first reaction gas that is not adhered onto the substrate. The second reaction gas continuous feeding process includes a second reaction gas impulse process of feeding the second reaction gas at an impulse flow rate greater than a basic flow rate during the first reaction gas purge process.

Abstract: A thin film deposition apparatus that can effectively use a chemical source having a high vaporization temperature is provided. The thin film deposition apparatus includes a chamber for depositing a thin film on a wafer, a canister for accommodating a liquid chemical source to be supplied to the chamber, and a vaporizer for vaporizing the liquid chemical source bubbled in the canister and providing the vaporized chemical source to the chamber. The vaporizer is installed on a top surface or lateral surface of the chamber by an adaptor block to be incorporated into the chamber. A first gas line between the vaporizer and the chamber is formed within the adaptor block.

Abstract: Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed ?the first deposition speed ?the third deposition speed.

Abstract: Provided is a method of depositing a thin film on a wafer.