Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract: Provided are an optical vision chip (OVC) and an image recognition method using the OVC. The OVC includes: a first display displaying an object image; a second display displaying a standard model image; and an optical sensor optically or electrically coupling the object image and the standard model image respectively displayed on the first and second displays and outputting a difference between the object image and the standard model image as an electrical signal.

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.

Abstract: Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.

Abstract: Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.

Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract: Provided are an optical vision chip (OVC) and an image recognition method using the OVC. The OVC includes: a first display displaying an object image; a second display displaying a standard model image; and an optical sensor optically or electrically coupling the object image and the standard model image respectively displayed on the first and second displays and outputting a difference between the object image and the standard model image as an electrical signal.

Abstract: Provided is a coherent tuning apparatus capable of continuously tuning wavelength of light over a wide band of wavelength at high speed and outputting high power, the apparatus including an optical waveguide through which spatially coherent light passes, an electrode array for changing a direction of the light passing through the optical waveguide by applying electric field or current to a portion of the optical waveguide, and a wavelength selection optical element unit for selecting a specific wavelength of the light.

Abstract: A method of fabricating a poled fiber and a dispersion compensator. The method including patterning to cover an etching-resistant material on the body portions of the cladding and on one end or both ends of the optical fiber excluding the portions to be grooved in the longitudinal direction, etching the bare portions of the cladding excluding the portions covered with the etching-resistant material, evaporating electrodes on the etched portions and applying a voltage to the electrodes, and inducing periodic poling generating optical phenomenon of the second-order nonlinearity to the optical fiber through the patterned electrodes. The compensator including a periodic poled fiber to generate a phase conjugate wave of a difference frequency between a pump light and a signal light received from a fiber coupler, and a filter to pass the phase conjugate wave coming out from the periodic poled fiber.

Abstract: The SG-DFB laser diode of the present invention has a high output optical efficiency in comparison with a conventional wavelength tunable laser provided with Bragg reflection ends at the both ends of the gain region for the wavelength tuning as a structure capable of connecting an optical fiber directly without losing the optical wave generated at the gain region. And also, the present invention can be manufactured by the manufacturing process of a conventional wavelength tunable laser diode without reinvesting a new equipment. Further, the SG-DFB laser diode of the present invention can control a broadband wavelength with a simple circuit construction in comparison with a conventional wavelength tunable laser diode since it can vary the wavelength in continuous/incontinuous by the change of current of the each region of the phase control regions.

Abstract: The present invention includes a poled fiber using the second-order nonlinear optical phenomenon, a method of fabricating the poled fiber, and a dispersion compensator to compensate for the chromatic dispersion of an optical fiber. The method of fabricating the poled fiber according to the present invention comprises, a step of covering an etching-resistant material on the portions of the cladding excluding the portions to be grooved in the longitudinal direction of the fiber, a step of etching the bare portions of the cladding excluding the portions covered with the etching-resistant material, a step of evaporating electrodes on the etched portions, and a step of applying voltage to the evaporated electrodes. According to the fabrication method of the poled fibre as described above, along with the use of a general optical fibre instead of a special fiber, since the distance between electrodes around the core can be appropriately controlled, a high electro-optic coefficient can be induced to the poled fibre.