Abstract: A display may have pixels configured to display images. The pixels may be formed from thin-film transistor circuitry on a substrate. Color filter elements formed from colored polymer such as colored photoimageable polymer may be formed on the substrate. A black matrix formed from black photoimageable polymer may have an array of openings. The colored polymer may have first portions that overlap the black matrix and second portions in the openings that form the color filter elements. In some portions of the pixels, the thin-film transistor circuitry may be interposed between the first portions of the colored polymer and the black matrix. In other portions of the pixels, data lines may be formed that are overlapped by the black matrix and that are interposed between the first portions of the colored polymer and the black matrix.

Abstract: A display may have pixels configured to display images. The pixels may be formed from thin-film transistor circuitry on a substrate. Color filter elements formed from colored polymer such as colored photoimageable polymer may be formed on the substrate. A black matrix formed from black photoimageable polymer may have an array of openings. The colored polymer may have first portions that overlap the black matrix and second portions in the openings that form the color filter elements. In some portions of the pixels, the thin-film transistor circuitry may be interposed between the first portions of the colored polymer and the black matrix. In other portions of the pixels, data lines may be formed that are overlapped by the black matrix and that are interposed between the first portions of the colored polymer and the black matrix.

Abstract: The present disclosure disclosed a light-emitting device with thin film transistors, comprising: a substrate and a substrate insulating layer formed thereon; a gate electrode, a source electrode, and a drain electrode. The gate electrode is arranged on the substrate insulating layer, and a gate insulating layer is formed between the gate electrode and the electrodes of the source and the drain. An oxide semiconductor layer comprises a resource region and a drain region being in electric contact with the source electrode and the drain electrode respectively and a channel region for providing a conductive channel therebetween. A passivation layer is arranged on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer. A shielding layer is arranged on the passivation layer for shielding the external light from illuminating on the oxide semiconductor layer. The present device can increase the conductive performance and stability of the component.

Abstract: The present disclosure provides a thin film transistor and a method of manufacturing the same. The transistor includes:a substrate; a gate electrode, a source electrode, and a drain electrode; and an oxide semiconductor layer; wherein, the oxide semiconductor includes a source region and a drain region which electrically contact with the source electrode and the drain electrode respectively, and a channel region for providing a conductive channel between the source electrode and the drain electrode, wherein, a gate isolation layer is arranged between the oxide semiconductor layer and the gate region electrically contacting with the gate electrode, and an oxide semiconductor protective layer is arranged on the oxide semiconductor layer. The transistor in the present disclosure can prevent the oxide semiconductor layer from being damaged during the process of manufacturing, and thus improve the conductive of the device and its integrity.

Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

Abstract: A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

Abstract: An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Abstract: A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

Abstract: An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Abstract: A method of fabricating of a metal line by a wet process is provided. A catalytic adhesive layer is formed on an insulating substrate. A fist metal layer is formed by an electoless plating process, and then, a second metal layer is formed by an electoless plating process or an electoplating process. The first and the second metal layers are patterned to form a metal line.