Abstract: A column in a memory array includes one bit cell circuit in each row for storing information about the row. The bit cell circuits store data in a data node and a complement data node in a cross-coupled inverter circuit. Toggling the nodes in a cross-coupled inverter includes discharging a charged node in contention with a charge current provided in the cross-coupled inverter circuit. The column circuit includes a first voltage supply circuit to decouple the cross-coupled inverter circuits from a first voltage rail to cut off charging current in response to a column set signal in a column set operation. The cross-coupled inverters of the bit cell circuits in the column circuit are coupled to a first voltage supply line. The column set input controls the first voltage supply circuit to decouple the first voltage supply line from a first voltage rail.

Abstract: Computer memory systems employing localized generation of a global bit line (GBL) clock signal to reduce clock signal read path divergence for improved signal tracking, and related methods. The memory system includes one or more memory banks that each include a memory array comprised memory bit cells organized in respective memory row and memory column circuits. A global bit line (GBL) keeper circuit in a GBL control path in the memory system is coupled to the GBLs to latch output read data from a word line path in a selected memory row circuit of a selected memory bank in a read operation. To improve tracking of timing of the GBL control path with the word line paths in the memory row circuits, a GBL clock signal and local WL clock signal in a given memory bank are separately sourced from a source clock locally within the selected memory bank.

Abstract: A column in a memory array includes one bit cell circuit in each row for storing information about the row. The bit cell circuits store data in a data node and a complement data node in a cross-coupled inverter circuit. Toggling the nodes in a cross-coupled inverter includes discharging a charged node in contention with a charge current provided in the cross-coupled inverter circuit. The column circuit includes a first voltage supply circuit to decouple the cross-coupled inverter circuits from a first voltage rail to cut off charging current in response to a column set signal in a column set operation. The cross-coupled inverters of the bit cell circuits in the column circuit are coupled to a first voltage supply line. The column set input controls the first voltage supply circuit to decouple the first voltage supply line from a first voltage rail.

Abstract: A CAM array of compare memory cell circuits includes a decode column corresponding to each set, and each set includes at least one row of the compare memory cell circuits. Each decode column receives a set clock signal addressing the corresponding set and generates a set match signal in each row of the corresponding set. A column compare circuit generates compare data indicating a bit of a compare tag. A row match circuit generates, for each row, in response to the set match signal, a row match signal indicating the compare tag matches the binary tag stored in the row. Circuits and loads in a decode column employed to generate the set clock signal correspond to circuits generating the row match signal in each column of the CAM array to reduce a timing margin of the match indication and decrease the access time for the CAM array.

Abstract: A CAM array of compare memory cell circuits includes a decode column corresponding to each set, and each set includes at least one row of the compare memory cell circuits. Each decode column receives a set clock signal addressing the corresponding set and generates a set match signal in each row of the corresponding set. A column compare circuit generates compare data indicating a bit of a compare tag. A row match circuit generates, for each row, in response to the set match signal, a row match signal indicating the compare tag matches the binary tag stored in the row. Circuits and loads in a decode column employed to generate the set clock signal correspond to circuits generating the row match signal in each column of the CAM array to reduce a timing margin of the match indication and decrease the access time for the CAM array.