Patents by Inventor Sai Susmita ADDEPALLI
Sai Susmita ADDEPALLI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240044000Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: ApplicationFiled: October 18, 2023Publication date: February 8, 2024Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj BENJAMIN RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
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Publication number: 20230420245Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.Type: ApplicationFiled: September 11, 2023Publication date: December 28, 2023Inventors: Daemian Raj BENJAMIN RAJ, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Abhigyan KESHRI, Allison YAU
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Patent number: 11851759Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: GrantFiled: December 16, 2022Date of Patent: December 26, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
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Patent number: 11798803Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.Type: GrantFiled: April 9, 2020Date of Patent: October 24, 2023Assignee: Applied Materials, Inc.Inventors: Daemian Raj Benjamin Raj, Gregory Eugene Chichkanoff, Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Abhigyan Keshri, Allison Yau
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Publication number: 20230123089Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj Benjamin RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
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Patent number: 11530482Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: GrantFiled: June 5, 2020Date of Patent: December 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
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Patent number: 11339475Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.Type: GrantFiled: November 8, 2019Date of Patent: May 24, 2022Assignee: Applied Materials, Inc.Inventors: Xinhai Han, Deenesh Padhi, Daemian Raj Benjamin Raj, Kristopher Enslow, Wenjiao Wang, Masaki Ogata, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Gregory Eugene Chichkanoff, Shailendra Srivastava, Jonghoon Baek, Zakaria Ibrahimi, Juan Carlos Rocha-Alvarez, Tza-Jing Gung
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Publication number: 20220020570Abstract: Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.Type: ApplicationFiled: July 19, 2020Publication date: January 20, 2022Applicant: Applied Materials, Inc.Inventors: Sai Susmita Addepalli, Yue Chen, Abhigyan Keshri, Qiang Ma, Zhijun Jiang, Shailendra Srivastava, Daemian Raj Benjamin Raj, Ganesh Balasubramanian
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Publication number: 20210047730Abstract: Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.Type: ApplicationFiled: August 6, 2020Publication date: February 18, 2021Applicant: Applied Materials, Inc.Inventors: Sai Susmita Addepalli, Yue Chen, Zhijun Jiang, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Greg Chichkanoff, Qiang Ma, Abhigyan Keshri, Xinhai Han, Ganesh Balasubramanian, Deenesh Padhi
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Publication number: 20200385862Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: ApplicationFiled: June 5, 2020Publication date: December 10, 2020Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj BENJAMIN RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
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Publication number: 20200365386Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.Type: ApplicationFiled: April 9, 2020Publication date: November 19, 2020Inventors: Daemian Raj BENJAMIN RAJ, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Abhigyan KESHRI, Allison YAU
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Publication number: 20200173022Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.Type: ApplicationFiled: November 8, 2019Publication date: June 4, 2020Inventors: Xinhai HAN, Deenesh PADHI, Daemian Raj BENJAMIN RAJ, Kristopher ENSLOW, Wenjiao WANG, Masaki OGATA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Jonghoon BAEK, Zakaria IBRAHIMI, Juan Carlos ROCHA-ALVAREZ, Tza-Jing GUNG
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Publication number: 20190378696Abstract: Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant channel and a return channel of the coolant channel embedded therein. Each of the supply channel and the return channel is a helix in the tubular wall. The helical supply channel and the helical return channel have the same direction of rotation and are parallel to each other. The supply channel and the return channel are interleaved in the tubular wall. With the supply channel and return channel interleaved in the metal shield, the thermal gradient in the metal shield is reduced.Type: ApplicationFiled: June 3, 2019Publication date: December 12, 2019Inventors: Sai Susmita ADDEPALLI, Satish KATAMBLI, Mayur Govind KULKARNI, Hanish Kumar PANAVALAPPIL KUMARANKUTTY, Vinay K. PRABHAKAR, Edward P. HAMMOND, IV, Juan Carlos ROCHA