Patents by Inventor Saichiro Kaneko

Saichiro Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8063418
    Abstract: In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: November 22, 2011
    Assignee: Panasonic Corporation
    Inventors: Hiroto Yamagiwa, Takashi Saji, Saichiro Kaneko
  • Semiconductor device
    Patent number: 7919818
    Abstract: A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capable of detecting a current passing through the current detecting IGBT. The base region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other, and the emitter region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other through the detecting resistor.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: April 5, 2011
    Assignee: Panasonic Corporation
    Inventors: Saichiro Kaneko, Takashi Kunimatsu
  • SEMICONDUCTOR DEVICE
    Publication number: 20110006340
    Abstract: In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.
    Type: Application
    Filed: September 20, 2010
    Publication date: January 13, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Hiroto Yamagiwa, Takashi Saji, Saichiro Kaneko
  • SEMICONDUCTOR DEVICE
    Publication number: 20090085060
    Abstract: In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.
    Type: Application
    Filed: September 2, 2008
    Publication date: April 2, 2009
    Inventors: Hiroto YAMAGIWA, Takashi Saji, Saichiro Kaneko
  • SEMICONDUCTOR DEVICE
    Publication number: 20080203533
    Abstract: A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capable of detecting a current passing through the current detecting IGBT. The base region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other, and the emitter region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other through the detecting resistor.
    Type: Application
    Filed: December 14, 2007
    Publication date: August 28, 2008
    Inventors: Saichiro KANEKO, Takashi KUNIMATSU