Abstract: Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is attached to a mount. A lens is disposed over the UVLED. A surface of the lens closest to the UVLED is the same width as the mount.

Abstract: Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A reflective layer is disposed on a surface of the mount surrounding the UVLED.

Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

Abstract: Methods and apparatus are provided for LED packages with surface textures. In one novel aspect, microstructures are formed on surfaces of the LED package such that light extract efficiency is improved. In one embodiment, the LED package has a silicone-encapsulating layer scattered with phosphors. In another embodiment, the LED package has a leadframe substrate. The microstructure can be micro lens, micro dents, micro pillars, micro cones, or other shapes. The microstructures can be periodically arranged or randomly arranged. In one novel aspect, the compression molding process is used to form rough surfaces. The molding block or the release film is modified with microstructures. In another novel aspect, sandblasting process is used. In one embodiment, microstructures are formed on sidewalls using the sandblasting process. The hardness, the angle, and/or the size of the blasting media are selected to improve the efficiency of the LED package.

Abstract: Methods and apparatus are provided to improve the yield rate of LED packaging using LED flip chips. In one novel aspect, extended pads made of sintered silver are disposed on the cathode and the anode of the LED flip chip. The thickness of the extended pad is from about 25 ?m to about 200 ?m. In another embodiment, the LED flip chip further comprises a phosphor layer such that the LED flip chip emits white light. In another novel aspect, the LED flip chip with extended pads made of sintered silver is produced at the wafer level. The wafer level process involves applying sintering silver pastes to the cathode and the anode of each LED flip chip formed on the wafer and sintering the wafer at a temperature about 180° C. to about 240° C. for about two hours. The wafer is cut to individual LED flip chips with extended sintered silver pads.

Abstract: A film is used on the surface of a color filter array to keep tiny particles that remain on the surface so that they do not interfere during subsequent processing steps. The particles may be the result of forming the color filter array or other structures. The film can prevent the formation of particle clusters in an imager.

Abstract: A method of forming a uniform color filter array. In one embodiment, a first compensation layer is formed over a non-planar color filter array and is patterned to form material structures. A second compensation layer is blanket deposited over the first layer. A technique, such as etching or polishing, is then performed to remove the first and second compensation layers, creating a substantially planar color filter array surface. In another embodiment, the planar color filter array is formed in a recessed trench.

Abstract: Methods of forming color filters having a light blocking material therebetween. A color filter is formed such that a trench is defined between a color filter and an adjacent color filter. The trench may be formed by exposing the color filter to polymerizing conditions such as, for example, ultraviolet radiation and heat. The trench may also be formed by etching between adjacent color filters. A material is formed within the trench.

Abstract: Methods for making a recessed color filter array for a semiconductor imager employing a sidewall spacer for reducing an edge effect from the array are disclosed. In one embodiment, a substrate is provided having an upper surface. Then, a recess is formed into the upper surface of the substrate. The recess has a bottom and a sidewall. Subsequently, a sidewall spacer is formed on the sidewall of the recess. A color resist is deposited into the recess after forming the sidewall spacer. In the embodiment, the sidewall spacer is formed of a material having a surface energy lower than that of a material defining the bottom of the recess. The color resist adheres less to the sidewall than to the bottom of the recess. Thus, the color resist does not conform to a shape of an edge portion of the recess, thereby reducing the edge effect.

Abstract: A method and apparatus providing an imaging device with a system of convex and concave microlenses at different levels over an array of photosensors. The concave microlenses redirect leaking light, which is not directed by the convex lenses onto the photosensors, onto the photosensors.

Abstract: A lens includes a gradient index of refraction and a curved shape. A method of making the lens includes forming a plurality of layers, forming a shaped resist on the plurality of layers, and etching the resist and the plurality of layers to transfer the shape of the resist into the plurality of layers.

Abstract: Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.

Abstract: A film is used on the surface of a color filter array to keep tiny particles that remain on the surface so that they do not interfere during subsequent processing steps. The particles may be the result of forming the color filter array or other structures. The film can prevent the formation of particle clusters in an imager.

Abstract: A method and apparatus providing an imaging device with a system of convex and concave microlenses at different levels over an array of photosensors. The concave microlenses redirect leaking light, which is not directed by the convex lenses onto the photosensors, onto the photosensors.

Abstract: A lens includes a gradient index of refraction and a curved shape. A method of making the lens includes forming a plurality of layers, forming a shaped resist on the plurality of layers, and etching the resist and the plurality of layers to transfer the shape of the resist into the plurality of layers.

Abstract: A lens structure and methods of forming the lens structure are disclosed. The method includes attaching a lens block to a substrate such that gravitational force acts to push the lens block against the substrate. The substrate is positioned such that gravitational force acts to pull the lens block from the substrate. The lens block is then heated such that gravity and surface tension of the block forms the lens structure.

Abstract: Self-aligned color filter array and methods of forming same. Embodiments include an image sensor having a substrate with a fabrication element having a first recess, the first recess having a second recess, a color filter formed in the second recess, and a microlens formed over the color filter.

Abstract: Methods for making a recessed color filter array for a semiconductor imager employing a sidewall spacer for reducing an edge effect from the array are disclosed. In one embodiment, a substrate is provided having an upper surface. Then, a recess is formed into the upper surface of the substrate. The recess has a bottom and a sidewall. Subsequently, a sidewall spacer is formed on the sidewall of the recess. A color resist is deposited into the recess after forming the sidewall spacer. In the embodiment, the sidewall spacer is formed of a material having a surface energy lower than that of a material defining the bottom of the recess. The color resist, when deposited into the recess, adheres less to the sidewall than to the bottom of the recess. Thus, the color resist does not conform to a shape of an edge portion of the recess where the sidewall and the bottom meet, thereby reducing the edge effect.

Abstract: A method of forming a uniform color filter array. In one embodiment, a first compensation layer is formed over a non-planar color filter array and is patterned to form material structures. A second compensation layer is blanket deposited over the first layer. A technique, such as etching or polishing, is then performed to remove the first and second compensation layers, creating a substantially planar color filter array surface. In another embodiment, the planar color filter array is formed in a recessed trench.