Abstract: The current disclosure relates to methods and assemblies for selectively depositing metal-containing materials, such as metal oxides, on different surfaces of a semiconductor substrate by cyclic vapor deposition techniques, including atomic layer deposition. The metal-containing material is deposited using a metal precursor having a metal atom bound to an acetamidinato ligand, such as dialkylacetamidinato ligand. The metal-containing material may be deposited on a metal surface relative to a dielectric surface, or to a dielectric surface relative to a metal surface, depending on the process flow. The current disclosure further relates to layers, structures and semiconductor devices deposited according to the methods disclosed herein, as well as to semiconductor processing assemblies configured and arranged to perform said methods.

Abstract: The disclosure relates to methods, processing assemblies, reactants and vapor deposition vessels for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising a silicon atom bonded to an oxygen atom and to a second atom selected from nitrogen and halogens.

Abstract: The disclosure relates to methods, processing assemblies, for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first conductive surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising alkylsilane having at least one alkoxy group bonded to a silicon atom.

Abstract: Methods of forming molybdenum silicide are disclosed. Exemplary methods can include selectively forming molybdenum silicide on a first surface relative to a second surface. Additionally or alternatively, exemplary methods can include a cleaning step prior to forming the molybdenum silicide.

Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices In the disclosure, a transition metal-containing material is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first material, and a second surface comprising a second material. A transition metal precursor comprising a transition metal halide compound is provided in the reaction chamber in vapor phase and a second precursor is provided in the reaction chamber in vapor phase to deposit a transition metal-containing material on the first surface relative to the second surface. A transition metal compound may comprise an adduct-forming ligand. Further, a deposition assembly for depositing transition metal-comprising material is disclosed.

Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.