Patents by Inventor Sairaju Tallavarjula

Sairaju Tallavarjula has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190105614
    Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.
    Type: Application
    Filed: August 29, 2018
    Publication date: April 11, 2019
    Inventors: Vishwas Kumar PANDEY, Lara HAWRYLCHAK, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Sairaju TALLAVARJULA, Kailash PRADHAN, Rene GEORGE, Johanes S. SWENBERG, Stephen MOFFATT
  • Publication number: 20190032216
    Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.
    Type: Application
    Filed: July 30, 2018
    Publication date: January 31, 2019
    Inventors: Kartik SHAH, Vishwas Kumar PANDEY, Kailash PRADHAN, Sairaju TALLAVARJULA, Rene GEORGE, Eric Kihara SHONO, Philip A. BOTTINI, Roger CURTIS
  • Publication number: 20180130647
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Application
    Filed: January 8, 2018
    Publication date: May 10, 2018
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Patent number: 9865438
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: January 9, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Patent number: 9558982
    Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: January 31, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Sairaju Tallavarjula, Kevin J. Bautista, Jeffrey Tobin
  • Patent number: 9403251
    Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.
    Type: Grant
    Filed: October 1, 2013
    Date of Patent: August 2, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sairaju Tallavarjula, Kevin Joseph Bautista, Jeffrey Tobin
  • Publication number: 20140113458
    Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.
    Type: Application
    Filed: September 18, 2013
    Publication date: April 24, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Heng PAN, Sairaju TALLAVARJULA, Kevin J. BAUTISTA
  • Publication number: 20140105582
    Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.
    Type: Application
    Filed: October 1, 2013
    Publication date: April 17, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: SAIRAJU TALLAVARJULA, KEVIN JOSEPH BAUTISTA, JEFFREY TOBIN
  • Patent number: 8101906
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: January 24, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Publication number: 20120015455
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Application
    Filed: July 22, 2011
    Publication date: January 19, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Patent number: 7813895
    Abstract: Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: October 12, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Aaron Hunter, Joseph Ranish, Johanes Swenberg, Robert M. Haney
  • Publication number: 20100084544
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Application
    Filed: October 8, 2008
    Publication date: April 8, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Publication number: 20090030632
    Abstract: Methods for matching semiconductor plasma processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in a sample chamber. Measuring the plasma attributes during process perturbations allows for the correlation of process parameters to the plasma optical emission spectra. The process parameters can then be adjusted to yield a processed substrate which matches that of the reference chamber. Methods for monitoring the stability of a plasma processing chamber using a calibrated spectrometer are also disclosed.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 29, 2009
    Inventors: SAIRAJU TALLAVARJULA, Aaron M. Hunter, Joseph M. Ranish, Johanes Swenberg, Robert M. Haney
  • Patent number: 6803297
    Abstract: A method for activating implanted dopants in a semiconductor substrate to form shallow junctions comprises the steps of: maintaining gas pressure in the processing chamber at a level significantly lower than atmospheric pressure, providing a flow of a carrier gas into the processing chamber, subjecting the substrate to a temperature treatment process, and introducing oxygen into the processing chamber during all or part of the temperature treatment process.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: October 12, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Dean Jennings, Sairaju Tallavarjula, Randhir Thakur
  • Publication number: 20040058512
    Abstract: A method for activating implanted dopants in a semiconductor substrate to form shallow junctions comprises the steps of: maintaining gas pressure in the processing chamber at a level significantly lower than atmospheric pressure, providing a flow of a carrier gas into the processing chamber, subjecting the substrate to a temperature treatment process, and introducing oxygen into the processing chamber during all or part of the temperature treatment process.
    Type: Application
    Filed: September 20, 2002
    Publication date: March 25, 2004
    Inventors: Dean Jennings, Sairaju Tallavarjula, Randhir Thakur