Abstract: An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Abstract: An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an encapsulation layer over the first dies and the substrate, an interface layer over the first dies and the encapsulation layer, and a passive heat spreader on the interface layer, wherein the interface layer thermally couples the first dies to the passive heat spreader. The passive heat spreader includes a silicon (Si) or a silicon carbide (SiC). The interface layer includes a silicon nitride (SiN) material, a silicon monoxide (SiO) material, a silicon carbon nitride (SiCN) material, or a thermal adhesive material. The semiconductor package may include a plurality of second dies and the substrate on a package substrate, a thermal interface material (TIM) over the second dies, the passive heat spreader, and the package substrate, and a heat spreader over the TIM and the package substrate.

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Abstract: Embodiments herein relate to systems, apparatuses, techniques or processes for hybrid bonding a die to a substrate. In embodiments, the die may be a chiplet that is bonded to an interconnect. In embodiments, the die may be a plurality of dies, where the plurality of dies are hybrid bonded to a substrate, to each other, or a combination of both. Other embodiments may be described and/or claimed.

Abstract: Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

Abstract: Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

Abstract: Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

Abstract: Microelectronic stacked die package structures formed according to some embodiments may include a first die comprising a first conductive layer over a substrate layer. A second die may be on the first conductive layer. A third die is on the second die. An edge region of the stacked die package structure comprises a first portion over a second portion, the first portion comprising edges of the third die, the second die, and the first conductive layer, and the second portion comprising the substrate layer of the first die, wherein the first portion comprises a curved profile, and the second portion comprises a substantially vertical profile.

Abstract: Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

Abstract: Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a semiconductor device. In selected examples, the semiconductor device may include two semiconductor dies, a redistribution layer, an interconnect bridge coupled between the two semiconductor dies and located vertically between the two semiconductor dies and the redistribution layer, and a metallic connection passing through the redistribution layer and coupled to one or more of the two semiconductor dies in a solder-free connection.

Abstract: Disclosed herein are microelectronic assemblies including bridges, as well as related methods. In some embodiments, a microelectronic assembly may include a bridge in a mold material.

Abstract: An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, an electronic package comprises a package substrate with a die side and a land side. In an embodiment, a pad is on the land side. In an embodiment, a dielectric layer covers sidewalls of the pad, and a surface finish is over an exposed surface of the pad.

Abstract: An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

Abstract: An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.